A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

A semiconductor device according to the present application includes a semiconductor substrate, an n-type first cladding layer provided on the semiconductor substrate, an n-type second cladding layer provided on the first cladding layer, an active layer provided on the second cladding layer, a p-type third cladding layer provided on the active layer, a surface electrode provided above the third cladding layer, a back surface electrode provided below the semiconductor substrate and a p-type diffusion prevention layer provided between the first cladding layer and the second cladding layer.

In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.

A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.

A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge on a surface of the ridge on which the transparent conductive layer is formed, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

A semiconductor optical device includes a substrate containing silicon and including terraces, a waveguide, and a diffraction grating in different regions in plan view; and a semiconductor device formed of a III-V compound semiconductor and having an optical gain, the semiconductor device being joined to the diffraction grating and the terraces and being in contact with an upper surface of the substrate. The waveguide is optically coupled to the diffraction grating in a direction in which the waveguide extends. The terraces are located on both sides of the waveguide and the diffraction grating in a direction crossing the direction in which the waveguide extends. The substrate has a groove between each of the terraces and the waveguide. The diffraction grating is continuously connected to the terraces in the direction crossing the direction in which the waveguide extends.