A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.

There is provided a device to generate an output light. The device comprises a substrate, a quantum well structure (QWS) disposed on the substrate, and a waveguide disposed on the substrate and in contact with the QWS. The QWS has a first layer, a second layer, and a third layer. The second layer is disposed and quantum-confined between the first layer and the third layer. In addition, the second layer is to emit an input light when electrically biased. The input light has an optical field extending outside the QWS and into the waveguide, to optically couple the waveguide with the QWS. The waveguide is to provide an optical resonance cavity for the input light. Moreover, the waveguide has an optical outlet to transmit at least some of the input light out of the waveguide to generate the output light.

There is provided a device to generate an output light. The device comprises a substrate, a quantum well structure (QWS) disposed on the substrate, and a waveguide disposed on the substrate and in contact with the QWS. The QWS has a first layer, a second layer, and a third layer. The second layer is disposed and quantum-confined between the first layer and the third layer. In addition, the second layer is to emit an input light when electrically biased. The input light has an optical field extending outside the QWS and into the waveguide, to optically couple the waveguide with the QWS. The waveguide is to provide an optical resonance cavity for the input light. Moreover, the waveguide has an optical outlet to transmit at least some of the input light out of the waveguide to generate the output light.

A method is for making a QCL having an InP spacer within a laser core, the QCL to provide a CW output in a high quality beam. The method may include selectively setting parameters for the QCL. The parameters may include a number of the InP spacer, a thickness for each InP spacer, a number of stages in the laser core, and a dopant concentration value in the laser core. The method may include forming the QCL based upon the parameters so that a figure of merit comprises a greatest value for a fundamental mode of operation for the QCL.

In the present disclosure, in an EADFB laser in which an SOA has been integrated, a new configuration in which deterioration of optical waveform quality is solved or mitigated while keeping characteristics that a manufacturing process can be simplified by using the same layer structure is indicated. In the optical transmitter of the present disclosure, a waveguide structure having a tapered structure in at least a part of the SOA waveguide is adopted. A width of the waveguide is changed to be reduced in an SOA region, and an amount of carrier consumption is made uniform in an optical waveguide direction. A waveguide width is continuously reduced in an optical waveguide direction in the SOA so that the optical confinement coefficient is reduced, and light power distributed in an active layer region is made constant.

Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, a photonic crystal structure, a p-type cladding layer, an n-type semiconductor layer and a meta-surface structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The photonic crystal structure is disposed over the active layer. The p-type cladding layer is disposed over the photonic crystal structure. The n-type semiconductor layer is disposed over the p-type cladding layer. The meta-surface structure disposed on a surface of the n-type semiconductor layer away from the p-type cladding layer.

A semiconductor structure comprising a matrix having a first cubic Group-III nitride with a first band gap, and a second cubic Group-III nitride having a second band gap and forming a region embedded within the matrix. The second cubic Group-III nitride comprises an alloying material which reduces the second band gap relative to the first band gap, a quantum wire is defined by a portion within the region embedded within the matrix, the portion forming a one-dimensional charge-carrier confinement channel, wherein the quantum wire is operable to exhibit emission luminescence which is optically polarised.

Some embodiments may include a laser diode having a strain-engineered cladding layer for optimized active region strain and improved laser diode performance. In one embodiment, the laser diode may include a semiconductor substrate having a material composition with a first lattice constant; and a plurality of epitaxy layers form on the semiconductor substrate, with plurality of epitaxy layers including a waveguide layer and cladding layers, wherein the waveguide layer includes an active region having a material composition associated with a target optical wavelength, wherein a second lattice constant of the material composition of the active region is different than the first lattice constant; wherein a material composition and/or thickness of an individual cladding layer of the cladding layers is/are arranged to impart a target stress field on the active region to optimize active region strain. Other embodiments may be disclosed and/or claimed.