GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

An optical logic device includes a distributed feedback laser configured to generate a first signal corresponding to distributed feedback laser output signal, the first signal being at a first wavelength. The device further includes a bandpass filter having a center frequency corresponding to the first wavelength. Additionally, the device can include an optical circulator having a first port coupled to a logic device input signal, a second port coupled to the first signal, and a third port coupled to the bandpass filter, wherein when the logic device input signal has a power above a predetermined threshold and there is a wavelength difference between the first wavelength and an input wavelength of the logic device input signal, a suppression of the first signal occurs.

An optical logic device includes a distributed feedback laser configured to generate a first signal corresponding to distributed feedback laser output signal, the first signal being at a first wavelength. The device further includes a bandpass filter having a center frequency corresponding to the first wavelength. Additionally, the device can include an optical circulator having a first port coupled to a logic device input signal, a second port coupled to the first signal, and a third port coupled to the bandpass filter, wherein when the logic device input signal has a power above a predetermined threshold and there is a wavelength difference between the first wavelength and an input wavelength of the logic device input signal, a suppression of the first signal occurs.

Example embodiments disclose a tunable optical pair source (TOPS) configured to generate first and second output optical beams having respective first and second frequencies that are phase locked with each other. The TOPS may include a first laser, such as a tunable laser, configured to generate a first laser beam, a radio frequency (RF) oscillator configured to transmit an RF reference signal, a beam splitter in optical communication with the first laser, and an electro-optic modulator configured to modulate the second split beam with the RF reference signal to form a modulated beam having a first sideband comb comprising a plurality of harmonics. Additionally, the TOPS may include an optical filter configured to receive the modulated beam and output a filtered optical beam, and a second laser configured to generate a second laser beam at the second frequency, the second laser being configured to receive the filtered optical beam as a seed.

An optical device for a quantum random number generator comprising: a source of phase randomised pulses of light, the source of phase randomised pulses of light further comprising a plurality of gain-switched lasers, each gain-switched laser having an output, and each gain-switched laser being configured to emit a stream of pulses such that the phase of each pulse in the stream of pulses is randomised, and an optical pulse combiner, the optical pulse combiner being configured to receive streams of pulses from the output of each gain-switched laser, combine the streams of pulses with one another into a combined stream of pulses and direct the combined stream of pulses into at least one output of the optical pulse combiner, the at least one output of the optical pulse combiner being the output of the source of phase randomised pulses of light; wherein the source of phase randomised pulses of light is configured such that the streams of pulses of light emitted by the plurality of gain-switched lasers are temporally offset relative to one another, a phase measurement element, the phase measurement element being configured to receive the combined stream of pulses from the output of the source of phase randomised pulses of light; and an optical detector, the optical detector being optically coupled to the phase measurement element.

A light-emitting device having a self-cooled semiconductor laser having a laser cavity.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

A narrow-band diode pumped alkali laser (DPAL) comprising a diode emitter assembly of broad area diode lasers arranged in a stack or array to emit longitudinally at a power level in a power range of 10-1500 W through a frequency selective element assembly aligned and positioned in an external laser cavity to the diode emitter assembly. The frequency selective element assembly comprising: an optical cell containing alkali vapor positioned between a pair of crossed polarizers; a partially reflective mirror that reflects a portion of light passing through the optical cell back toward the diode emitter assembly; and magnetic field producing components that produce a magnetic field through the optical cell that creates a 90 polarization of light passing through the optical cell at a narrow-band frequency corresponding to the absorption line of alkali atom, attenuating components of the light passing through the optical cell at frequencies outside of the narrow-band frequency.

The disclosure relates in some aspects to providing miniature power-efficient agile photonic generators of microwave waveforms. Illustrative examples use chip lasers integrated in close thermal proximity with one another to provide a miniature microwave arbitrary waveform generator (AWG). Due to the small size of the lasers and the close integration, common ambient fluctuations from the environment or other sources can be efficiently reduced, yielding improved spectral purity of generated radio-frequency (RF) signals. Tight physical integration also permits a small device footprint with minimal acceleration sensitivity. The lasers may be locked to cavities or other resonators to allow efficient decoupling of the frequency and amplitude modulation of the lasers to provide flexibility to the waveform generator. Exemplary devices described herein can produce frequency chirped signals for radar applications. The frequency chirp may be linear and/or nonlinear. Tuning methods are also described herein.