A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

A variable wavelength light source and an apparatus including the same are disclosed. The variable wavelength light source includes: a first waveguide; a second waveguide spaced apart from the first waveguide; a first optical amplifier including a first gain medium; and a second optical amplifier including a second gain medium that is different from the first gain medium.

GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part. The semiconductor laser includes an electrode provided over the bottom surface of each separation groove with an insulating layer being interposed therebetween.

GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

A system and method for generating optically synthesized microwave signals with broadband tunability is disclosed. The system includes a first laser and a second laser, where the first laser and second laser are optically coupled to each other. The second laser is operable to receive optical signals injected by the first laser, and to output optical signals via one or more feedback paths. The system provides for singular or mutual optical injection. A photodetector is optically coupled to the second laser over the one or more feedback paths, and operable to convert optical signals to electrical signals. A phase modulator is coupled to the photodetector, where the electrical signals from the photodetector are operable to drive the phase modulator and close the one or more feedback paths. The respective lengths of the feedback paths may be selected such that their corresponding lengths provide a frequency spacing for optical signals therein that is significantly smaller than a frequency of microwave signals.

An optical line terminal includes an optical comb generator, N downlink channels D.sub.k, and N uplink-photodetectors PD.sub.k. The optical comb generator is configured to generate a carrier signal having an optical-frequency-comb spectrum and including N optical tones T.sub.k and N optical tones R.sub.k, k={1, 2, . . . , N}. Each of the N downlink channels D.sub.k is optically coupled to the optical comb generator and is configured to generate a respective downlink signal DS.sub.k that includes optical tone T.sub.k modulated by downlink data. Each of the N uplink-photodetectors PD.sub.k is configured to receive a respective one of a plurality of modulated uplink signals US.sub.k, having optical tone R.sub.k as a carrier signal.

Apparatus for providing optical radiation (1), which apparatus comprises a laser diode (2), a pulse generator (9), and a modulator (5), wherein: the pulse generator (9) is configured to emit picosecond pulses; the modulator (5) is configured to emit nanosecond pulses; the laser diode (2) has a first terminal (6) and a second terminal (7); the pulse generator (9) is connected to the first terminal (6); and the modulator (5) is configured to bias the laser diode (2) below a lasing threshold (8) of the laser diode (2), and the apparatus being characterized in that: the modulator (5) is connected to the second terminal (7); the pulse generator (9) comprises a semiconductor junction (32) connected to a differentiator (4); the semiconductor junction (32) is such that electric current flowing through the semiconductor junction (32) can be turned off more quickly than it can be turned on; and the differentiator (4) is such that a step change that occurs when the electric current flowing through the semiconductor junction (32) is turned off is converted to an electrical pulse, thereby gain switching the laser diode (2) such that it emits an optical pulse (10) having an optical pulse width (11) less than 10 ns.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.