A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements disposed in a row direction and in a column direction on an upper surface of the base; a plurality of pairs of wires that penetrate the side wall in the row direction; and a lens array fixed to the substrate, the lens array comprising a plurality of lens sections disposed in the row direction and in the column direction above the plurality of semiconductor laser elements. Each laser beam that is emitted from the semiconductor laser elements and is incident on a light incident surface of the lens array has a beam shape with a greater width in the column direction than in the row direction.

An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.

In one embodiment, a lidar system includes a multi junction light source configured to emit an optical signal. The multi junction light source includes a seed laser diode configured to produce a seed optical signal and a multi junction semiconductor optical amplifier (SOA) configured to amplify the seed optical signal to produce the emitted optical signal. The lidar system also includes a receiver configured to detect a portion of the emitted optical signal scattered by a target located a distance from the lidar system. The lidar system further includes a processor configured to determine the distance from the lidar system to the target based on a round-trip time for the portion of the scattered optical signal to travel from the lidar system to the target and back to the lidar system.

A light emitting device includes: a base having a mounting face including a disposition region, a plurality of first wirings, and a plurality of second wirings; a plurality of light emitting elements, including one or more first light emitting elements, one or more second light emitting elements, and one or more third light emitting elements, disposed in two rows and N columns (N≥2) in the disposition region; one or more relay members, including one or more first relay members disposed in the region between the two rows of the light emitting elements; a plurality of first light emitting element wirings for electrically serially connecting the one or more first light emitting elements; a plurality of second light emitting element wirings for electrically serially connecting the one or more second light emitting elements; and a plurality of third light emitting element wirings for electrically serially connecting the one or more third light emitting elements. The first light emitting element wirings include wirings that are connected with the one or more first relay members.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A laser beam generation device includes power supply units, LD modules, a combiner, and a control device. The LD modules receive currents from the power supply units, and output laser beams. The combiner collects the laser beams and outputs one laser beam. The control device generates control signals such that power of the laser beam becomes a laser output setting value and such that the currents become current command values. Phases of pulses of the control signals are shifted from each other by 60 degrees.

A first semiconductor element (laser diode) and a second semiconductor element (laser diode) are connected to each other in series between a wiring electrically connected to an anode of the first semiconductor element and a wiring electrically connected to a cathode of the second semiconductor element. In this case, each of the first semiconductor element and the second semiconductor element includes a laminated pattern having an emission layer and a plurality of semiconductor layers covering this laminated pattern.

A semiconductor optical integrated device comprises a semiconductor amplifier and a plurality of semiconductor lasers, wherein the semiconductor amplifier and the semiconductor lasers are monolithically integrated on a semiconductor substrate, an n-side cladding layer of the semiconductor amplifier and an n-side cladding layer of each of the semiconductor lasers are electrically insulated by an insulating layer formed between the semiconductor substrate and the n-side cladding layer of the semiconductor lasers and an insulating layer formed between the n-side cladding layer of the semiconductor amplifier and the n-side cladding layer of the semiconductor lasers, the n-side cladding layer of the semiconductor lasers and the p-side cladding layer of the semiconductor amplifier is configured to be electrically connected, and the semiconductor amplifier and each semiconductor laser of the plurality of semiconductor lasers are electrically connected in series.

A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.

A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements arrayed in a first direction on an upper surface of the base; a sealing member fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens array disposed above the sealing member, the lens array including a plurality of lens sections arrayed in the first direction. In the lens array, a maximum outer diameter of each lens sections is 1.25 times or more than an inter-vertex distance between adjacent ones of the lens sections in the first direction.