A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

A light emitting device includes a base, a lid portion, a plurality of semiconductor laser elements, and a collimate lens. The lid portion is fixed to the base to define a hermetically sealed space by the lid portion and the base. The semiconductor laser elements are provided in the hermetically sealed space. The collimate lens has a non-lens portion fixed to the lid portion, and a plurality of lens portions connected and aligned along one direction and surrounded by the non-lens portion when viewed from a light extracting surface side of the collimate lens.

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.

A light emitting device includes a plurality of semiconductor laser elements, a frame part, a light-reflective member, a plurality of wires, and first and second protective elements. The frame part has a pair of first inner lateral surfaces and a second inner surface. The light-reflective member is configured to reflect laser light traveling from at least one of the plurality of semiconductor laser elements toward one of the first inner lateral surfaces of the frame part. The wires electrically connect the semiconductor laser elements respectively to an upper surface of the frame part. The first and second protective elements are disposed on the upper surface of the frame part in an area of the upper surface along the second inner surface. At least one of the wires is bonded on an area of the upper surface between the first and second protective elements.

A plurality of laser diode bars and a plurality of dummy bars are alternately arranged on projections provided on an upper surface of a plate so that an opening of the plate is sandwiched between the projections. The plurality of laser diode bars and the plurality of dummy bars are arranged with the projections as reference positions. End surfaces of the plurality of laser diode bars are protruded upward relative to the plurality of dummy bars. Next, an insulation film is formed on protruding portions of the plurality of laser diode bars relative to the plurality of dummy bars.

A depth obtaining component includes a laser driver array and a laser array. The laser array includes a plurality of lasers. The laser driver array includes one or more control units, and each control unit is configured to control selection of one or more lasers in the laser array. The one or more control units are disposed in a charge loop of the laser driver array. A laser corresponding to the control unit can be flexibly selected based on a first switch module and a capacitive module in the control unit. In this way, scanning laser emission of the laser array can be implemented based on the laser drive circuit, no scanning device such as a micro electro mechanical systems mirror needs to be additionally disposed, and circuit support can be provided for implementing a small-sized, power-efficient, and cost-effective optical transmit end.

A laser source includes a topological cavity for nonreciprocal lasing, a magnetic material and an optical waveguide. The magnetic material is arranged to interact with the topological cavity. The optical waveguide is arranged to receive light extracted from the topological cavity upon breaking of time-reversal symmetry in the topological cavity.

A substrate for mounting electronic element includes: a first substrate including a first surface and a second surface opposite to the first surface; a second substrate including a third surface and a fourth surface opposite to the third surface; and heat dissipation bodies each including a fifth surface and a sixth surface opposite to the fifth surface. The first substrate includes at least one mounting portion for at least one electronic element at the first surface. Heat conduction of the heat dissipation bodies in a direction perpendicular to a longitudinal direction of the at least one mounting portion and perpendicular to a direction along opposite sides of the second substrate is greater than heat conduction of the heat dissipation bodies in the longitudinal direction of the at least one mounting portion and in the direction along opposite sides of the second substrate in a transparent plan view of the substrate.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

A heat source package, comprising a housing having a metal base portion with one or more channels formed therein, the one or more channels having an inner surface, a coating of an anti-corrosive material adhered to a portion of the inner surface of the one or more channels wherein the anti-corrosive material is selected to have a thermal conductivity within a threshold range such that the coating changes the thermal resistance of a coated portion of the channel less than 25% with respect to an uncoated portion of the metal base portion. In examples, a heat source may be thermally coupled to the inner surface of the channels and the channels may be formed to conduct a liquid coolant from a liquid inlet to a liquid outlet to dissipate heat away from the heat source.