The present disclosure is directed to light-distribution systems on photonic integrated circuits (PIC) that split and amplify a light signal received from at least one remotely located laser into a plurality of amplified light signals, where amplification is provided by an integrated semiconductor optical amplifier (SOA). By locating the laser remotely with respect to the SOA-based PIC, the laser and PIC can be subjected to different ambient environmental conditions. Additionally, a lower-power laser can be used since the optical loss associated with splitting is compensated for by the amplification. As a result, lower current densities and optical powers can be used in both the source laser and the SOA. In some embodiments, the sequence of power splitting and amplification is repeated multiple times, thereby enabling system to scale gracefully.

The present disclosure relates to an optical amplifier configured for an image capturing device. The optical amplifier may include a substrate. The optical amplifier may also include an optical amplification region formed over the substrate. The optical amplification region may include a first optical amplification layer and a second optical amplification layer. The first optical amplification layer may be configured to amplify light at a first wavelength range, and the second optical amplification layer may be configured to amplify light at a second wavelength range. The optical amplifier may further include at least one electrode layer electrically contacting the optical amplification region.

An optical circulator is a device that routes optical pulses from port to port in a predetermined manner, e.g. in a 3-port optical circulator, optical pulses entering port 1 are routed out of port 2, while optical pulses entering port 2 exit out of port 3 and optical pulses fed into port 3 exit out of port 3. Currently such an optical circulator is made of discrete components such as magnetooptic garnets, rare-earth magnets and optical polarizers that are packaged together with fiber optic elements. Disclosed herein is a different kind of optical circulator that is monolithically integrated on a single semiconductor substrate and that is applicable for the routing of optical pulses. The embodied invention will enable photonic integrated circuits to incorporate on-chip optical circulator functionality thereby allowing much more complex optical designs to be implemented monolithically.

An optical transmitter includes: a set of reflective semiconductor optical amplifiers (RSOAs) or other reflective gain media, a set of ring filters, a set of intermediate waveguides, a shared waveguide, a shared loop mirror, and an output waveguide. Each intermediate waveguide channels light from an RSOA in proximity to an associated ring filter to cause optically coupled light to circulate in the associated ring filter. The shared waveguide is coupled to the shared loop mirror, and is located in proximity to the set of ring filters, so that light circulating in each ring filter causes optically coupled light to flow in the shared waveguide. Each RSOA forms a lasing cavity with the shared loop reflector, wherein each lasing cavity has a different wavelength associated with a resonance of its associated ring filter. The output waveguide is optically coupled to the shared loop mirror and includes an electro-optical modulator.

A tunable laser includes a reflective silicon optical amplifier (RSOA) with a reflective end and an interface end and an array of narrow-band reflectors, which each have a different center wavelength. It also includes a silicon-photonic optical switch, having an input port and N output ports that are coupled to a different narrow-band reflector in the array of narrow-band reflectors. The tunable laser also includes an optical waveguide coupled between the interface end of the RSOA and the input of the silicon-photonic optical switch. The frequency of this tunable laser can be tuned in discrete increments by selectively coupling the input port of the silicon-photonic optical switch to one of the N output ports, thereby causing the RSOA to form a lasing cavity with a selected narrow-band reflector coupled to the selected output port. The tunable laser also includes a laser output optically coupled to the lasing cavity.

The disclosed embodiments provide a tunable laser that includes a set of M reflective silicon optical amplifiers (RSOAs) and a set of N narrow-band reflectors. It also includes a silicon-photonic optical switch, having M amplifier ports, which are coupled through a set of M optical waveguides to the set of M RSOAs, and N reflector ports, which are coupled to the set of N narrow-band reflectors. The tunable laser also includes a switching mechanism that facilitates coupling at least one selected amplifier port from the M amplifier ports with a selected reflector port from the N reflector ports, thereby causing an RSOA coupled to the selected amplifier port to form a lasing cavity with a narrow-band reflector coupled to the selected reflector port. The tunable laser also includes a laser output, which is optically coupled to the lasing cavity.

A light detection and ranging (LIDAR) system may include a laser source configured to emit one or more optical beams; a scanning optical system configured to scan the one or more optical beams over a scene and capture reflections of the one or more optical beams from the scene; a measurement system configured to divide the scene into a plurality of pixels, the measurement system comprising a detector configured to detect a return signal from multiple pixels of the plurality of pixels as the one or more optical beams are scanned across the scene, and a data processor configured to perform data processing from the return signal from the multiple pixels to determine a range and/or range rate for each pixel of the scene.

An amplifier operable with an electric drive signal can amplify signal light having a signal wavelength. A laser diode has an active section with input and output facets. The facets are in optical communication with the signal light and are configured to pass the signal light through the laser diode. The active section is configured to generate pump light in response to injection of the electrical drive signal into the active section. The pump light has a pump wavelength different from the signal wavelength. A doped fiber doped with an active dopant is in optical communication with the signal light and is in optical communication with at least a portion of the pump light from the laser diode. The pump wavelength of the pump light is configured to interact with the active dopant of the fiber and thereby amplify the signal light.

An integrated photonic device having an array of two or more semiconductor optical amplifiers includes a first semiconductor optical amplifier, which has a first gain region and a second gain region connected by a first connecting waveguide, and a second semiconductor optical amplifier, which is provided in parallel with the first semiconductor optical amplifier and has a third gain region and a fourth gain region connected by a second connecting waveguide. The first gain region and the second gain region are provided on an outer side of the third gain region and the fourth gain region. The first connecting waveguide is configured to connect the first gain region and the second gain region on the outer side of the second connecting waveguide.

A narrow linewidth laser includes a passive ring resonant cavity, an FP resonant cavity, and a first gain region. The passive ring resonant cavity and the FP resonant cavity are combined to form an M-Z (Mach-Zehnder interference structure) compound external cavity structure, and the M-Z compound external cavity structure is at least used for providing wavelength selection and narrowing laser linewidth. The first gain region is provided on the outer side of the M-Z compound external cavity structure and is used for providing a gain for the whole laser. The narrow linewidth laser is simple in structure, high in side-mode suppression ratio, narrow in linewidth, and high in output power. By further integrating a PN junction region or MOS junction region, broadband and rapid tuning with low power consumption can also be achieved, and tuning management is simple.