A semiconductor laser element includes a nitride semiconductor layered body defining an optical waveguide, and including a first n-side nitride semiconductor layer having a periodic structure of a refractive index periodically changing along a resonance direction of the optical waveguide, a p-side nitride semiconductor layer, an active layer including one or more well lavers and barrier lavers, the one or more well layers including an n-side well layer located closest to the first n-side nitride semiconductor laver, and the one or more barrier layers including an n-side barrier layer disposed between the n-side well layer and the first n-side nitride semiconductor layer, and a second n-side nitride semiconductor layer disposed between the first n-side nitride semiconductor layer and the active layer. The second n-side nitride semiconductor layer includes In and Ga. A thickness of the second n-side nitride semiconductor layer is greater than a thickness of the n-side barrier layer.

An example system may include a first vertical cavity surface emitting laser (VCSEL) that includes a first integrated polarization locking structure to produce a polarized optical data signal. The system may also comprise a second VCSEL that includes a second integrated polarization locking structure, the second integrated polarization locking structure orthogonal to the first integrated polarization locking structure, to produce an orthogonally polarized optical data signal. Lenses may be disposed on the substrate opposite the first VCSEL, to collimate the polarized optical data signal, and opposite the second VCSEL to collimate the orthogonally polarized optical data signal. A polarization division multiplexer may combine the first collimated polarized optical data signal and the second collimated orthogonally polarized optical data signal.

An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.

A housing for an optically pumped semiconductor (OPS) laser resonator is terminated at one end thereof by an OPS-chip. The laser resonator is assembled on a platform with the OPS-chip at one end of the platform. The platform is fixedly attached to a baseplate at the OPS-chip end of the platform. The remainder of the platform extends over the baseplate with a gap between the platform and the baseplate. A pump-laser is mounted directly on the baseplate and delivers pump radiation to the OPS-chip.

A photonic device comprising: a support; an intermediate layer comprising at least one dielectric material and a first and second excess thickness of silicon separated from each other by a space; a first patterned silicon layer at least partially forming a waveguide, and first to fifth waveguide sections; a first dielectric layer covering the first silicon layer and a gain structure comprising at least one gain medium in contact with the first dielectric layer; the second and fourth wave guide sections, the first and second excess thicknesses of silicon, and the first and second ends of the gain structure forming a first and second optical transition zone between a hybrid laser waveguide, formed by a central portion of the gain structure, the space and the third waveguide section and the first and fifth waveguide sections respectively. The invention also relates to a method of fabricating such a photonic device.

A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.

Methods, systems, and apparatus, for an external cavity FP laser. In one aspect, an apparatus is provided that includes a FP laser diode; a Faraday rotator (FR) coupled to receive an optical output of the FP laser diode and that rotates a polarization of the optical output; an optical fiber coupled at a first end to receive the output of the FR; a WDM filter coupled to a second end of the optical fiber to receive the optical signal from the optical fiber; and a FRM coupled directly or indirectly to an output of the WDM filter, wherein an optical output of the WDM filter is partially reflected by the FRM such that the polarization of a reflected beam is rotated, and wherein the reflected optical signal then passes through the FR with its polarization being rotated by the FR before it is injected back into the FP laser diode.

A semiconductor laser device is disclosed that includes a laser resonator situated to produce a laser beam, with the laser resonator including an angled distributed Bragg reflector (a-DBR) region including first and second ends defining an a-DBR region length corresponding to a Bragg resonance condition with the first end being uncleaved and including a first mode hop region having a first end optically coupled to the a-DBR region first end and extending a first mode hop region length associated with the a-DBR region length to a second end so as to provide a variable longitudinal mode selection for the laser beam.

A tunable laser has a first binary super grating (BSG), a second BSG, and a phase adjuster. The first BSG, the second BSG, and the phase adjuster are optically tuned by changing temperatures of respective heating elements. The tunable laser also includes three temperature sensors, a first sensor to measure the temperature of the first BSG; a second sensor to measure the temperature of the second BSG, and a third sensor to measure the temperature of the phase adjuster. A lasing frequency is determined by a set of values of the three temperature sensors. In some embodiments, instead of a third temperature sensor, a pilot tone is applied to the phase adjuster to lock to a maximum of an aligned pair of peaks.

A laser apparatus includes a vertical-emitting semiconductor laser device for emitting laser light. The vertical-emitting semiconductor laser device includes a main body having a first mirror section, a second mirror section, and an active layer arranged between the first mirror section and the second mirror section for generating the laser light. The main body has an emission region on a surface thereof for emission of the laser light. The laser apparatus further includes an optical meta-element arranged on the emission region. The optical meta-element includes an optical metamaterial for shaping the laser light. The optical meta-element is configured to emit the laser light in at least one laser mode.