A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

Photonic devices having a photonic waveguiding layer, and a cladding layer, disposed on the photonic waveguiding layer, and where the cladding section is a material comprising Scandium. The cladding layer may include a material comprising Al.sub.1-xSc.sub.xN material where 0<x≤0.45.

An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 10.sup.15 cm.sup.−3 and 10.sup.19 cm.sup.−3, inclusive.

A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, the plurality of emitters is disposed in substantially a honeycomb shape on the substrate, and the pad is formed on one side of the substrate adjacent to the array region.

The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition Al.sub.xIn.sub.yGa.sub.1-x-yN with 0≤x≤1, 0≤y<1 and x+y≤1, wherein at least one layer of the layer system includes an aluminum portion x≤0.05 or an indium portion y≥0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

The light emitting device includes an excitation light source, and a light emitting light source, wherein the light emitting light source includes a substrate, a photonic crystal structure which is provided to the substrate and has a light emitting layer, and an electrode configured to inject an electrical current into the light emitting layer, the excitation light source irradiates the light emitting layer with excitation light, the light emitting layer generates light due to the electrical current injected from the electrode and the excitation light, and in the photonic crystal structure, the light emitted in the light emitting layer resonates in an in-plane direction of the substrate, and a laser beam is emitted in a normal direction of the substrate.

A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.