A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.

Provided is a light-emitting device and a method for manufacturing the same which allow the filling performance of the film that fills the space around light-emitting elements to be improved. The light-emitting device according to the disclosure includes a substrate, a plurality of light-emitting elements and a plurality of electrodes sequentially provided on a first surface of the substrate, and a film provided on the first surface of the substrate to surround the light-emitting elements, and when the first surface is a bottom surface of the substrate, the lowermost part of a bottom surface of the film is provided in a higher position than a bottom surface of the electrode. In this way, for example, the film is formed before the substrate is provided on another substrate, so that the filling performance of the film that fills the space around the light-emitting elements can be improved.

A surface emitting laser according to one embodiment of the disclosure includes a stacked structure including, in order, a first DBR layer, an active layer, a second DBR layer, and a first electrically conductive contact layer. The stacked structure further includes a second electrically conductive contact layer and a two-dimensional electron gas generation layer between the first DBR layer and the active layer or in the first DBR layer. The surface emitting laser further includes a first electrode layer in contact with the first electrically conductive contact layer and a second electrode layer in contact with the second electrically conductive contact layer.

An aspect of the present disclosure includes a direct modulated laser (DML) with a dielectric current confinement ridge waveguide (RWG) structure. The DML comprises a substrate, one or more layers of material disposed on the substrate to provide a multi quantum well (MQW), first and second insulation/dielectric structures disposed on opposite sides of the MQW, and one or more layers of material disposed on the MQW to provide a mesa structure for receiving a driving current. The mesa structure is preferably disposed between the first and second insulation structures to provide a dielectric current confinement (RWG) structure. The mesa structure further preferably includes an overall width that is greater than the overall width than the active region of the DML that provides the MQW.

A semiconductor optical device includes: a lower mesa structure extending in a stripe shape and composed of some layers including an active layer; a buried layer configured to bury both sides of the lower mesa structure and made of indium phosphide; and an upper mesa structure extending in a stripe shape and composed of some layers including a bottom layer made of phosphorus-free materials, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom surface being in contact with the lower mesa structure and the buried layer.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

[Object] To provide a vertical cavity surface emitting laser element having excellent electric responsiveness and high productivity and reliability, a method of producing the vertical cavity surface emitting laser element, and a photoelectric conversion apparatus.

[Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a semiconductor stacked body. The semiconductor stacked body is a semiconductor stacked body that includes a first mirror having a first conductive type, a second mirror that has a second conductive type and causes optical resonance together with the first mirror, an active layer provided between the first mirror and the second mirror, and a confinement layer that is provided between the first mirror and the second mirror and has a non-oxidized region and an oxidized region, the non-oxidized region being formed of a first material, the oxidized region being provided around the non-oxidized region and being formed of a second material obtained by oxidizing the first material, and has a mesa having an outer peripheral surface from which end surfaces of the active layer and the confinement layer are exposed and an ion implantation region that is a region into which ions have been implanted, is formed to reach a predetermined depth in the active layer and the confinement layer from the outer peripheral surface, and is separated from the non-oxidized region.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include an active layer having a quantum cascade structure and to have a first end surface and a second end surface facing each other in a light waveguide direction; a first electrode; a second electrode; an insulating film continuously formed from the second end surface to a region on a second end surface side of at least one surface of a surface on an opposite side of the first electrode from the semiconductor laminate and a surface on an opposite side of the second electrode from the semiconductor substrate; and a metal film formed on the insulating film to cover at least the active layer when viewed in the light waveguide direction. An outer edge of the metal film does not reach the one surface when viewed in the light waveguide direction.

A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.