Provided is a temperature detection circuit having less manufacturing fluctuations in detection temperature and capable of easily adjusting the manufacturing fluctuations in detection temperature. The temperature detection circuit includes: a constant current circuit configured to output a constant current; a voltage-controlled current circuit, which is controlled by a voltage output from a heat sensitive element and is configured to output a current corresponding to temperature; and a current comparator configured to compare the constant current and the current corresponding to temperature, and output a detection signal indicating that a predetermined temperature is detected. Temperature characteristics of the constant current circuit and temperature characteristics of the voltage-controlled current circuit have a correlation with each other. The temperature detection circuit is configured to detect temperature based on a result of comparing the output current of the constant current circuit and the output current of the voltage-controlled current circuit.

An integrated circuit (IC) heater circuit comprises a drive circuit configured to increase the temperature of the IC when consuming power; a temperature sensor coupled to a control node of the drive circuit to activate and deactivate the drive circuit to provide an ambient temperature for the IC, wherein current of the temperature sensor varies with temperature; and a control circuit coupled to the temperature sensor and configured to adjust variation in the temperature sensitivity of the current of the temperature sensor.

A power holding circuit device adapted for a vehicle microcontroller unit (MCU), a car battery, and an ignition switch (IGN) comprises a metal-oxide-semiconductor field-effect transistor (MOSFET) switch unit, wherein the MOSFET switch unit is connected to the car battery; a first bipolar junction transistor (BJT), wherein the first BJT is connected to the MOSFET switch unit and the ignition switch; and a second bipolar junction transistor (BJT), wherein the second BJT is connected to the MOSFET switch unit and the vehicle MCU.

An electronic circuit for sensing a temperature rise in a power transistor device, the temperature rise caused by a current flow in the power transistor device. The power transistor device and a sense-FET are disposed on a substrate. The sense-FET senses a fractional portion of the current flow and outputs a current signal. A JFET has its drain connected to the drain of the power transistor device. The gate of the JFET is connected to the source of the power transistor device, such that when the power transistor device is on, the JFET is also turned on, and a drain voltage signal of the power transistor device is output at a second node of the JFET. A detection circuit receives the drain voltage signal and the current signal and outputs an alarm signal when the drain-source resistance of the power transistor device exceeds a combined threshold limit.

A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.

The maximum time that external components of a switch mode power supply over-conduct is determined by an actual ambient temperature at which the devices are operating before they are turned on. Their operation time is thus extended when temperatures are low and decreased when temperatures are high.

An over temperature protection circuit includes a temperature sensor unit, a detection unit, and a filter unit. The temperature sensor unit detects a temperature and outputs a temperature detection signal. The detection unit has a first threshold for determining whether a temperature state is a normal state, and a second threshold for determining whether the temperature state is an over temperature state; and operates with respect to an internal ground. The detection unit determines the normal state or the over temperature state, based on the level of the temperature detection signal with respect to the first threshold and the second threshold; and outputs a state signal. The filter unit filters out a change of the state signal, produced in accordance with a change of the internal ground.

The disclosure relates to a solid-state circuit breaker with negative temperature coefficient NTC temperature data acquisition, wherein the solid-state circuit breaker includes: a plurality of first NTC temperature data acquisition circuits, each connected with an input end and an output end of power supply terminals and configured to acquire a first resistance value indicating temperature data of the power supply terminals; a plurality of second NTC temperature data acquisition circuits, each connected to both ends of a switch and configured to acquire a second resistance value indicating temperature data of the switch; a voltage follower, configured to output a voltage value corresponding to the second resistance value; a voltage/frequency V/F conversion circuit, configured to output an amplitude-frequency converted voltage value; an isolator, configured to output a digitally isolated voltage value; and a microcontroller MCU, connected to the first NTC temperature data acquisition circuit and the isolator.

A leakage protection device includes: a switch module for controlling power connection between input and output ends of current-carrying lines; a leakage detection module for detecting a leakage current signal on the current-carrying lines and generating a leakage fault signal when the leakage current signal is detected or exceeds a preset threshold; an over-temperature protection module, including first and second temperature sensors, respectively located close to first and second plug blades to detect temperatures near them, to generate over-temperature fault signals when the detected temperature exceeds a preset threshold; a driving module for receiving the leakage fault signal and driving the switch module to disconnect the power connection in response thereto. The device can disconnect the power connection quickly when the temperature of a plug blade is too high to avoid danger, and has a high over-temperature protection accuracy.