H02H7/205

Switch box and overcurrent preventing method

A switch box includes a circuit substrate having a conductor pattern, a switching element that is mounted on the circuit substrate, a bus bar having a current input and output portion formed at one end thereof and a mounting portion formed at the other end thereof, the mounting portion being connected to the conductor pattern of the circuit substrate so as to be electrically conducted to the switching element through the conductor pattern, and a magnetic sensor that is mounted on the circuit substrate to detect a magnetic field generated due to a current flowing into the bus bar. The magnetic sensor is disposed in a gap formed between the circuit substrate and the bus bar.

Systems and Methods for Determining Arc Events
20180351505 · 2018-12-06 ·

In some examples, a system comprises a first component; a second component configured to receive signals from the first component via one or more wires; and a controller. In at least some examples, the controller is coupled to the one or more wires and is trained with a classification model to distinguish between signals indicating arc events and signals not indicating arc events. In at least some example, the controller is further configured to: receive the signals; extract features that are at least partially related to the received signals; classify the extracted features using the classification model; determine an occurrence of the arc event based on the classification; and provide an output signal indicating an arc event.

Packaged semiconductor device
10122358 · 2018-11-06 · ·

A semiconductor device includes: a transistor including a main terminal and a sense terminal; a main output electrode connected to the main terminal via a first wire; a sense output electrode connected to the sense terminal via a second wire; and a package sealing the transistor, the first and second wires, part of the main output electrode and part of the sense output electrode, wherein a wiring inductance from the main terminal to the main output electrode is larger than a wiring inductance from the sense terminal to the sense output electrode.

SEMICONDUCTOR DEVICE
20180309441 · 2018-10-25 · ·

A semiconductor device includes: a transistor including a main terminal and a sense terminal; a main output electrode connected to the main terminal via a first wire; a sense output electrode connected to the sense terminal via a second wire; and a package sealing the transistor, the first and second wires, part of the main output electrode and part of the sense output electrode, wherein a wiring inductance from the main terminal to the main output electrode is larger than a wiring inductance from the sense terminal to the sense output electrode.

Over voltage protection of a transistor device

An once a channel voltage exceeds a threshold, when the transistor is in an OFF state. This is over-voltage protection circuit for a transistor is presented. This circuit acts to switch on the transistor achieved with internal components which are integrated with the transistor, avoiding the need for external diodes or Zener structures. The circuit has a transistor with a control terminal, a first current carrying terminal and a second current carrying terminal. The over-voltage protection circuit has a level shifter arranged to feed back a level-shifted version of a channel voltage between said first and second current carrying terminals to the control terminal. The level shifter allows the switching threshold voltage of the transistor to be crossed when a predetermined value of the channel voltage is crossed.

Bypass Circuit and Method to Bypass Power Modules in Power System
20180287484 · 2018-10-04 ·

A method and apparatus to bypass, using bypass circuits, non-operating power modules in a power system. Multiple power sources are coupled to inputs of respective power modules. Multiple bypass circuits have respective terminals operatively coupled to the respective outputs of the power modules. The outputs of the power modules are coupled in a series connection and the series connection is coupled across a load. Each bypass circuit includes a switch operatively coupled across a first input of a circuit and an output of a power module. A feedback circuit includes a second input coupled to an output of the circuit. A coupling circuit includes a third input coupled to an output of the feedback circuit. The coupling circuit includes an output operatively coupled across the switch. The switch is biased to provide the bypass responsive to a voltage of the output of the circuit and the voltage of the power module output.

PHOTOVOLTAIC RAPID SHUTDOWN AND ARC SENSING SYSTEM
20240313521 · 2024-09-19 ·

The present disclosure provides a system, apparatus and method for providing rapid shutdown for photovoltaic power systems and provides a system, apparatus and method for providing arc sensing for photovoltaic power systems. An AC current can be put on the DC bus to control PV panel shutdown. Local mean decomposition can be used to sense arcing on the DC bus.

LOAD-DRIVING INTEGRATED CIRCUIT DEVICE

To provide a semiconductor device for driving an electric load to be divided into a plurality of opening/closing devices so that when an abnormality exists in any one of the division devices, that division device can be removed and replaced by an auxiliary device. Each of a plurality of opening/closing circuit units has an upper-side opening/closing device and a lower-side opening/closing device; while load driving is stopped, there is monitored the potential of the connection point between the upper and lower opening/closing devices at a time when any one of the opening/closing devices is closed or both of them are opened, and it is determined whether there exists short-circuit abnormality or disconnection abnormality in each of the opening/closing devices. When abnormality exists, the upper and lower opening/closing devices are removed and the auxiliary circuit is made effective.

DISTRIBUTED SWITCHES TO SUPPRESS TRANSIENT ELECTRICAL OVERSTRESS-INDUCED LATCH-UP

Distributed switches to suppress transient electrical overstress-induced latch-up are provided. In certain configurations, an integrated circuit (IC) or semiconductor chip includes a transient electrical overstress detection circuit that activates a transient overstress detection signal in response to detecting a transient electrical overstress event between a pair of power rails. The IC further includes mixed-signal circuits and latch-up suppression switches distributed across the IC, and the latch-up suppression switches temporarily clamp the power rails to one another in response to activation of the transient overstress detection signal to inhibit latch-up of the mixed-signal circuits.

Current limiting circuits capable of adjusting current limiting value

A current limiting circuit includes a first voltage terminal, a second voltage terminal, a first transistor and a current limiting module. The first transistor includes an input terminal and an output terminal of the first transistor that are connected in series on a path formed by the first voltage terminal and the second voltage terminal. The current limiting module is electrically connected to a control terminal of the first transistor. The current limiting module is configured to output a control signal to the control terminal of the first transistor for controlling a state of the first transistor so that a current limiting value of the current limiting circuit is adjustable.