A power control device includes: an output voltage controller configured to control an output voltage based on a feedback voltage corresponding to the output voltage; and an overvoltage protector configured to continue or stop the operation of the output voltage controller based on a first detection result of whether the output voltage has exceeded an output voltage threshold value and a second detection result of whether the feedback voltage has fallen to or below a feedback voltage threshold value.

A power conversion apparatus and a short circuit protection circuit and method of capacitor thereof are provided. A rectifier circuit rectifies an AC signal into a DC signal. An electrical energy storage circuit is coupled to the rectifier circuit, and the electrical energy storage circuit includes a plurality of capacitors connected in series. A detection circuit is coupled to the electrical energy storage circuit to detect cross voltages of the capacitors. A control circuit is coupled to the rectifier circuit and the detection circuit. When the cross voltage of any of the plurality of capacitors is greater than a preset voltage, the rectifier circuit is disabled by the control circuit.

A power stage in an electronic fuse circuit is driven by controller. The controller includes a first comparator set for output voltage control and a second comparator set for output current control. Each comparator set includes at least one comparator having a reference input, a feedback input, and one or more outputs. A driver circuit includes output terminals for driving the power stage. The driver circuit includes a switch that is selectively activated in response to outputs from the first and second comparator sets to clamp the voltage across the output terminals of the driver circuit. The clamp operation is made in response to feedback input to either of the first and second comparator sets having exceeded a certain reference.

An aircraft electrical system includes a controller system having a self-testing system configured to test an operability of a transient voltage suppression device. A single line communication bus is connected to a communications output of the controller. A first lightning protection device including the transient voltage suppression device is configured to protect the controller from transient voltages. An enable/disable circuit comprising a normally closed switch connects a low side of the lightning protection device to a neutral.

A semiconductor device has a protected line connected to a ground line by a triggered clamp. A variable shunt, which includes a depletion mode JFET, is connected between the protected line and the ground line, in parallel with the triggered clamp. The depletion mode JFET is formed in a substrate of the semiconductor device. The channel of the depletion mode JFET provides a resistive path for the variable shunt when the semiconductor device is unpowered, to dissipate charge from the powered line after an ESD event. When the semiconductor device is operated, that is, powered up, the gate of the depletion mode JFET may be biased to turn off the channel, and so reduce impairment of operation of the semiconductor device.

A multiple spark-gap arrester is disclosed. In an embodiment the arrester includes a series connection of a plurality of spark gaps between a first potential node and a reference-ground potential node and a trigger circuit having an input and an output, the input being coupled to a second potential node between two adjacent spark gaps of the plurality of spark gaps, and the output being coupled to at least one of the spark gaps between the second potential node and the reference-ground potential node, wherein the trigger circuit is configured, when at least one spark gap between the first potential node and the second potential node is ignited, to supply a trigger signal for the at least one of the spark gaps between the second potential node and the reference-ground potential node.

An electrical system includes an input node electrically connectable to a power supply. The system includes a plurality of voltage suppressors, with at least one of the voltage suppressors electrically connected to the input node. A voltage selection switch is electrically connected to at least one of the plurality of voltage suppressors. A controller in communication with the switch may selectively operate the switch based on a nominal operating voltage at the input node.

A power control device includes: an output voltage controller configured to control an output voltage based on a feedback voltage corresponding to the output voltage; and an overvoltage protector configured to continue or stop the operation of the output voltage controller based on a first detection result of whether the output voltage has exceeded an output voltage threshold value and a second detection result of whether the feedback voltage has fallen to or below a feedback voltage threshold value.

A circuit assembly includes plural voltage control modules configured to be operably coupled in series to a connection and configured to control voltage delivered to an X-ray electrode. Each voltage module includes an on/off circuit portion, a balancing circuit portion, and a tuning circuit portion. The on/off circuit portion is configured to provide a voltage for activating or deactivating the X-ray electrode. The balancing circuit portion is coupled in parallel to the on/off circuit portion, and includes a capacitor and a resistor coupled in parallel. The tuning circuit portion is coupled in parallel to the balancing circuit portion and the on/off circuit portion, and is configured to adjust a voltage provided to the X-ray electrode.

In an electrical circuit arrangement, which is formed by an RC-snubber element monolithically integrated into a semiconductor substrate, a first capacitor and a resistor of the RC-snubber element are vertically formed in a semiconductor region of a first type of doping of the semiconductor substrate. At least one further capacitor is connected in series with the first capacitor. The further capacitor is integrated laterally with the first capacitor in a semiconductor region of a second type of doping, which adjoins the semiconductor region of the first type of doping, and by virtue of the different type of doping electrically insulates the further capacitor from the semiconductor region of the first type of doping. This circuit arrangement forms a low inductance RC-snubber element with high dielectric strength, which has high heat dissipation and integration density.