A plurality of power supply circuits include a second power supply circuit for a CPU included in a control unit and a first power supply circuit for another circuit. An output voltage from the first power supply circuit is higher than an output voltage from the second power supply circuit. A range of input voltage is divided into three levels of voltage sub-ranges in accordance with a requirements specification. When the input voltage falls within a lower level voltage sub-range, both of an output function of the first power supply circuit and an output function of the second power supply circuit are stopped. When the input voltage falls within an intermediate level voltage sub-range, the output function of the first power supply circuit is stopped. When the input voltage falls within an upper level voltage sub-range, all circuits are controlled so as to operate.

An illustrative dual power inverter module includes a DC link capacitor electrically connectable to a source of high voltage direct current (DC) electrical power. A first power inverter is electrically connectable to the DC link capacitor and configured to convert high voltage DC electrical power to three phase high voltage alternating current (AC) electrical power and is configured to supply the three phase high voltage AC electrical power to a first electric motor. A second power inverter is electrically connectable to the DC link capacitor and configured to convert high voltage DC electrical power to three phase high voltage AC electrical power and is configured to supply the three phase high voltage AC electrical power to a second electric motor. A common controller is electrically connectable to the first power inverter and the second power inverter. The common controller is configured to control the first power inverter and the second power inverter.

The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sensing signal V.sub.CS which is indicative of a drain-to-source current of the GaN-based semiconductor device and generate a control driving signal V.sub.DRV to the GaN-based semiconductor device such that a gate-to-source voltage V.sub.GS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage V.sub.ref over an on-time duration. Impact of the change in the voltage drop across the current sensing resistor to the operation of the GaN-based semiconductor device is eliminated.

Current sharing among bidirectional double-base bipolar junction transistors. One example is a method comprising: conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN); conducting current through a second B-TRAN the second B-TRAN coupled in parallel with the first B-TRAN; measuring a value indicative of conduction of the first B-TRAN, and measuring a value indicative of conduction of the second B-TRAN; and adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction of the second B-TRAN.

An illustrative dual power inverter module includes a detection circuit configured to detect loss of low voltage DC electrical power supplied to a controller for a first power inverter and a second power inverter of a drive unit for an electric vehicle. A first backup power circuit is associated with the first power inverter and a second backup power circuit is associated with the second power inverter. Each backup power circuit is configured to convert high voltage DC electrical power to low voltage DC electrical power responsive to detection of loss of low voltage DC electrical power supplied to the controller. Three-phase short circuitry is configured to apply a same fault action to the first power inverter and the second power inverter responsive to detection of loss of low voltage DC electrical power supplied to the controller, wherein the same fault action includes applying equalized torque to each axle operatively coupled to the drive unit.

A DC-DC power converter employs a full bridge series resonant converter topology with a resonant tank and two transformers, one before and one after the resonant tank, to obtain a high voltage (e.g., approximately 300V, approximately 1500V or greater) output from a relatively low voltage (e.g., approximately 9V-16V) input, for instance an input from one or more battery cells. DC-DC power converter is operable to output high voltage (e.g., around 300V, 1500V or higher) short duration pulses (e.g., tens of nanoseconds or less). A burst mode control technique provides as good regulation characteristics at light loads. Instead of turning OFF the active switches during an OFF period, the switches are operated at a different frequency (e.g., higher frequency) during the OFF period than a frequency at which the switches are turned ON during the ON period. Auxiliary loads can also be supplied.

A master converter and a plurality of slave converters each have an input connected to an associated one of a plurality of power storage elements, respectively, and an output connected to an output terminal in parallel. The master converter converts the voltage of the associated capacitor based on a duty ratio for matching an output voltage to a voltage command value, outputs the converted voltage to the output terminal, and transmits a control signal indicative of the duty ratio to the plurality of slave converters via a signal insulation unit. Each of the plurality of slave converters converts the voltage of the associated capacitor in response to the control signal transmitted via the signal insulation unit and outputs the converted voltage to the output terminal. A correction means is configured to correct at least the duty ratio in the master converter such that the duty ratio in the master converter matches the duty ratio in each of the plurality of slave converters.

A drive circuit is controlled when power is interrupted. When power is turned off, a main power supply is switched to a sub-power supply, and a residual charge of a step-up circuit is lowered to a drive voltage of a drive circuit using a step-down circuit is used as the sub-power supply.

A charge pump circuit includes: a charge pump core circuit configured to generate an output voltage, an oscillator configured to provide a clock signal for the charge pump core circuit, and a feedback circuit configured to control the oscillator based on the output voltage, wherein the feedback circuit includes an inner loop.

Reference voltage generation circuits and related methods are disclosed. An example reference voltage generation circuit includes a voltage generating circuit including an enhancement mode (E-mode) gallium nitride (GaN) transistor, the voltage generating circuit to, in response to a first clock signal having a first phase, generate a first voltage associated with the E-mode GaN transistor, and, in response to a second clock signal having a second phase different from the first phase, generate a second voltage associated with the E-mode GaN transistor, and a switching capacitor circuit coupled to the voltage generating circuit, the switching capacitor circuit to generate a reference voltage based on a difference between the first voltage and the second voltage.