H02M1/0006

Control unit for improving conversion efficiency

A control unit is provided. The control unit is configured to provide a control signal for controlling a power unit. The power unit includes a first positive voltage terminal, a second positive voltage terminal, a first negative voltage terminal, a second negative voltage terminal, and a switching element. The first negative voltage terminal and the second positive voltage terminal are coupled to each other in a short circuit manner. One terminal of the switching element is electrically connected to the first negative voltage terminal. The control unit is configured to: receive a pulse width modulation signal; receive a first power supply signal; receive a second positive voltage terminal signal; output a second power supply signal; and output the control signal for controlling the switching element to be turned on or turned off.

POWER CONVERSION DEVICE

A voltage evaluation value generator receives voltage detection values of power storage elements of all of converter cells included in a power converter and generates a first voltage evaluation value of each power storage element of all of the converter cells and a second voltage evaluation value of each power storage element in a plurality of converter cells included in each of a plurality of groups obtained by classifying all of the converter cells in advance, without using a mean value of voltage detection values. A voltage macro controller uses the voltage evaluation value to calculate a control value set in common to at least the converter cells in the same group for controlling deficiency and excess of stored energy in all of the converter cells and the converter cells in each group.

DRIVING CIRCUIT FOR DRIVING CHIP
20220393678 · 2022-12-08 ·

The present invention provides a driving circuit for a driving hip. The driving circuit includes a bootstrap circuit with a bootstrap voltage terminal. A power terminal of a high-voltage driving circuit is connected to the bootstrap voltage terminal, and a ground terminal of the high-voltage driving circuit is connected to a regulating terminal. A high-side drive circuit includes a high-side pull-up circuit and a high-side pull-down circuit. The driving circuit includes: an auxiliary power terminal; a mirror current source an input terminal of the mirror current source being connected to the bootstrap voltage terminal; a first MOS transistor; a second MOS transistor an equivalent diode component, an output terminal of the second MOS transistor being connected to the regulating terminal through the equivalent diode component; and an equivalent resistance component, the gate of the first MOS transistor being connected to the regulating terminal through the equivalent resistance component.

POWER SUPPLY CIRCUIT FOR SWITCHING MODE POWER SUPPLY AND CONTROL METHOD THEREOF
20220393603 · 2022-12-08 ·

A power supply circuit for a switching mode power supply, having: a charging capacitor coupled to an auxiliary winding; a power supply diode coupled to a power supply capacitor, wherein the charging capacitor has a connecting terminal coupled to the power supply diode, and the charging capacitor and the power supply diode are serially coupled between the auxiliary winding of the switching mode power supply and the power supply capacitor; and a power supply switch coupled between the connecting terminal and a primary ground of the switching mode power supply.

Voltage Conversion Circuit and Non-Isolated Power Supply System

A voltage conversion circuit and a non-isolated power supply system are provided. The voltage conversion circuit includes: a switching power supply chip which includes a power MOS transistor and a driving circuit, where the driving circuit is adapted to drive the power MOS transistor; and a driving circuit power supply unit which includes a boost unit, wherein when an output voltage of the boost unit is less than a working voltage of the driving circuit, an internal power supply of the switching power supply chip provides the working voltage for the driving circuit; and when the output voltage of the boost unit reaches the working voltage of the driving circuit, the output voltage of the boost unit provides the working voltage for the driving circuit.

CIRCUIT TO TRANSFER A SIGNAL BETWEEN DIFFERENT VOLTAGE DOMAINS AND CORRESPONDING METHOD TO TRANSFER A SIGNAL

A circuit includes a current path and a negative bootstrap circuitry coupled to the current path. The current path is coupled between a floating voltage and a reference ground, and includes a current generator coupled through a resistor to the floating voltage at a first node of the current generator. The current generator is controlled by a pulse signal. The negative bootstrap circuitry includes a pump capacitor coupled to a second node of the current generator and to the reference ground. The pump capacitor is configured to provide a negative voltage at the second node of the current generator based on the pulse signal.

SEMICONDUCTOR DEVICE AND SWITCHING POWER SUPPLY
20220393586 · 2022-12-08 ·

A semiconductor device includes: an operational amplifier; an external terminal configured to be attached to an external capacitor; and a resistor configured to be connected between a node, to which an output terminal and an inverting input terminal of the operational amplifier are connected in common, and the external terminal.

POWER SEMICONDUCTOR DEVICE
20220385285 · 2022-12-01 · ·

A power semiconductor device of the present disclosure includes: a first switching element; a second switching element connected in parallel to the first switching element, and having a higher short circuit capability than the first switching element; drive circuits to drive the first switching element and the second switching element; and determination circuits to compare a target current as a sum of a current flowing through the first switching element and a current flowing through the second switching element to a first threshold and a second threshold greater than the first threshold. The drive circuits switch off the first switching element when the determination circuits determine that the target current is equal to or greater than the first threshold, and switch off the second switching element when the determination circuits determine that the target current is equal to or greater than the second threshold.

Dynamic Division Ratio Charge Pump Switching
20220385178 · 2022-12-01 ·

Circuits and methods to mitigate or eliminate potentially damaging events (e.g., damaging current spikes from in-rush current, charge transfer current, short circuits, etc.) in DC-DC power converters. Embodiments enable dynamic switching of conversion ratios in reconfigurable power converters while under load without turning off the power converter circuitry or suspending switching of the charge pump power switches. Embodiments selectively increase the ON resistance, R.sub.ON, for at least some power FETs in a power converter by actively controlling the driver voltage to the gates of the power FETs. During normal operation, the power FET driver voltage may be set to overdrive the FET gate to lower R.sub.ON to a desired level that allows high current flow. For other scenarios, the power FET driver voltage may be reduced so as to increase R.sub.ON while ON and thus impede current flow to provide protection against potentially damaging events.

SYNCHRONOUS CONVERTER FOR USE WITH REVERSE CURRENT PROTECTION DIODE

A converter to convert an input voltage into a regulated output current for supplying a load includes a reverse current protection diode having an anode coupled to the input voltage and a cathode, an energy storage element coupled to the cathode of the reverse current protection diode, a high side transistor coupled to the energy storage element and responsive to a high side control signal, and a low side transistor coupled to the energy storage element and responsive to a low side control signal. A controller is configured to generate the high side control signal and the low side control signal such that the low side transistor is enabled and the high side transistor is disabled during a pre-regulation interval.