Patent classifications
H02M1/0029
DRIVE CIRCUIT AND SEMICONDUCTOR DEVICE
A drive circuit includes a second drive circuit that drives a semiconductor switching element in a case where a pulse width of a corresponding signal is determined to be larger than a second threshold, and a timing adjustment circuit that adjusts a timing at which the second drive circuit cooperates with a first drive circuit to drive the semiconductor switching element during a turn-off period of the semiconductor switching element due to drive of the first drive circuit.
Power transducer including a rate of voltage change detection circuit
An electronic circuit includes an output node configured to output a DC signal indicating a rate of change over time of voltage at a measurement target node. The rate-of-voltage change detection circuit includes a first capacitor and a first resistor connected in series between the measurement target node and a reference voltage node, a first rectifier circuit connected between the output node and a connection node of the first capacitor and the first resistor, and a second capacitor connected between the output node and the reference voltage node.
GATE DRIVE CIRCUIT, INSULATED GATE DRIVER AND GATE DRIVE METHOD
A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.
Drive circuit and semiconductor device
A drive circuit includes a second drive circuit that drives a semiconductor switching element in a case where a pulse width of a corresponding signal is determined to be larger than a second threshold, and a timing adjustment circuit that adjusts a timing at which the second drive circuit cooperates with a first drive circuit to drive the semiconductor switching element during a turn-off period of the semiconductor switching element due to drive of the first drive circuit.
ELECTRONIC CIRCUITRY, ELECTRONIC SYSTEM, AND DRIVING METHOD
According to one embodiment, electronic circuitry includes a semiconductor switching element; and a driving circuit configured to supply a current to a control terminal of the semiconductor switching element and to adjust a magnitude of the current supplied to the control terminal based on a voltage at the control terminal.
RESONANT PARALLEL TRIPLE ACTIVE BRIDGE CONVERTER
A resonant parallel triple active bridge converter comprising a DC port configured to receive DC energy, an AC port configured to produce AC energy, and an AC line cycle energy storage port, coupled to both the DC port and the AC port, where the AC line cycle energy storage port comprises an energy storage device for storing energy during an energy conversion process.
Welding power supply with half bridge
A method and apparatus for providing welding-type power is disclosed. It includes an input circuit, a dc bus, an output circuit, and a control module. The input circuit receives power and provides an intermediate signal to the bus. The output circuit receives the dc bus and provides an ac welding-type output. The output circuit includes a half-bridge output inverter with at least first and second switches. The output inverter further includes an output control circuit. The output control circuit provides freewheeling paths that includes control switches, the output, antiparallel diodes. The control module has a four quadrant control module that provides control signals to the half bridge output inverter and provides modulating control signals to the first and second output control switches. The modulating signals cause the output control switches to be turned on and off multiple times to control a rate of change of output current.
Semiconductor process variation detector
In some examples, a system includes a voltage source terminal, a voltage reference terminal, a field effect transistor (FET), a current source, a comparator, and adjustment circuitry. The FET has a gate terminal and a non-gate terminal, the gate terminal coupled to the voltage source terminal. The current source is coupled to the non-gate terminal. The comparator has a comparator output and first and second comparator inputs, the first comparator input coupled to the non-gate terminal, and the second comparator input coupled to the voltage reference terminal. The adjustment circuitry has a circuitry input and a circuitry output, the circuitry input coupled to the comparator output, and the adjustment circuitry configured to adjust the circuitry output responsive to the circuitry input, in which the adjustment reduces a drive strength of the circuit.
DC-DC converter with inductor slew
A voltage converter includes an input voltage line; an inductor coupled to the input voltage line; transistors coupled to the inductor; an output voltage line coupled to at least one of the transistors; a current sensor coupled to at least one of the input voltage line, the inductor, or the output voltage line; and a comparator coupled between the current sensor and the transistors. A DC-DC converter may include a voltage converter having an inductor and a plurality of transistors and configured to convert an input voltage into a power voltage and output the power voltage to an output terminal, an input current sensor configured to sense the input current of the converter, and a controller configured to change the slew rate of an inductor voltage in response to the input current of the converter and a preset reference current.
TRANSISTOR DRIVE CIRCUIT
Provided is a transistor drive circuit that drives a transistor to be driven and has a configuration including a controller that performs control to cause to temporally vary a circuit parameter contributing to a rise time or a fall time of the transistor to be driven.