A power converter is provided. The power converter includes a first phase including a first upper diode and a first lower diode, a second phase including a second upper diode and a second lower diode, a third phase including a third upper diode and a third lower diode, a plurality of MOSFETs, each of the first upper diode, the first lower diode, the second upper diode, the second lower diode, the third upper diode, and the third lower diode electrically connected in parallel with a respective one of the plurality of MOSFETs, and a control system configured to selectively activate each MOSFET when current flows through a diode electrically coupled in parallel with that MOSFET.

A power conversion device includes a first switch and a second switch connected in series between a positive electrode and a negative electrode of a first power supply. A first node is between the first and second switches. The first node can be connected to a load. A first diode has an anode connected to the first node and a cathode connected to the positive electrode of the first power supply. A third switch is connected between a positive electrode of a second power supply and the positive electrode of the first power supply. A first timer is connected to a gate electrode of the third switch. A first comparator has a first input that is connected to a gate electrode of the first switch, a second input at which a reference voltage can be received, and an output that is connected to the first timer.

A power electronics circuit is disclosed that includes a switching circuit comprising a first solid-state device coupled in series with a second solid-state device, with at least the first solid-state device comprising a solid-state switch having a gate terminal. The power electronics circuit also includes a current sense transformer positioned between the first and second solid-state devices and configured to sense a current flowing on a conductive trace connecting the first and second solid-state devices, and a controller coupled to the switching circuit and the current sense transformer so as to be in operable communication therewith. The controller is programmed to receive a current sense signal from the current sense transformer indicative of the current flowing on the conductive trace and modulate a gate voltage to the gate terminal of the first solid-state device based on the received current sense signal, so as to control switching thereof.

A converter includes a first diode having an anode and a cathode connected respectively to an input terminal and a first output terminal, a second diode having an anode and a cathode connected respectively to a second output terminal and the input terminal, a first transistor connected between the first output terminal and the input terminal, a second transistor connected between the input terminal and the second output terminal, and a bidirectional switch connected between the input terminal and a third output terminal and including third to sixth diodes and a third transistor. Each of the first diode, the second diode, and the third transistor is made of a wide bandgap semiconductor. Each of the first and second transistors and the third to sixth diodes is made of a semiconductor other than the wide bandgap semiconductor.

An inverter circuit provided in a power conversion device includes a full-bridge inverter, and a short circuit part. The short circuit part includes switching elements and clamp elements connected to the switching elements. The clamp elements suppress application of an excessive voltage such as a surge voltage to the switching elements.

According to one embodiment, when an effective value of an input current flowing into a booster circuit rises to a value greater than or equal to a second set value, boosting of the booster circuit is started and, after the start, when the effective value lowers to a value lower than a first set value lower than the second set value, boosting of the booster circuit is stopped. Then, if the three-phase AC source is in an unbalanced state, the first set value is set to a value lower than usual.

A diode includes a first-conductivity-type barrier region disposed between a drift region and a second impurity region and having an impurity concentration higher than that of the drift region and a second-conductivity-type field extension prevention region disposed between the barrier region and the drift region. The diode also includes a trench gate disposed to extend from a second main surface of a semiconductor substrate through the second impurity region and the barrier region and reach the field extension prevention region. The trench gate has a gate electrode for applying a gate voltage. A gate electrode is applied with a parasitic gate voltage, as the gate voltage. The parasitic gate voltage has an absolute value of a potential difference with a second electrode being equal to or greater than a threshold voltage of a parasitic transistor formed of the second impurity region, the barrier region, and the field extension prevention region.

A switching cell includes: a half-bridge circuit including a first electronic switch and a second electronic switch connected in series between a first input terminal and a second input terminal of an electronic converter, wherein a first capacitor is connected in parallel to the first electronic switch and a second capacitor is connected in parallel to the second electronic switch; a first inductor connected between a first output terminal of the electronic converter and an intermediate point between the first electronic switch and the second electronic switch; a second inductor and a first capacitor connected in series between a first terminal of the first inductor and the intermediate point; a switching circuit connected between the first terminal of the first inductor and a second output terminal of the electronic converter; and a third capacitance connected between the first terminal of the first inductor and the second input terminal.

An electric assembly includes a reverse conducting switching device and a rectifying device. The reverse conducting switching device includes transistor cells for desaturation configured to be, under reverse bias, turned on in a desaturation mode and to be turned off in a saturation mode. The rectifying device is electrically connected anti-parallel to the switching device. In a range of a diode forward current from half of a maximum rating diode current of the switching device to the maximum rating diode current, a diode I/V characteristic of the rectifying device shows a voltage drop across the rectifying device higher than a saturation I/V characteristic of the switching device with the transistor cells for desaturation turned off and lower than a desaturation I/V characteristic of the switching device with the transistor cells for desaturation turned on.

An active clamp control circuit for a flyback converter can be configured to: control turn-on states of a main switch and an auxiliary switch to make the auxiliary switch turn on for a first time period in at least one switching period, and to make the main switch turn on for a second time period in each switching period, where the first and second time periods are non-overlapping periods of the switching period; and compare a peak value of an inductor current flowing through the main switch against a first threshold to adjust the first time period of the auxiliary switch when the peak value of the inductor current is greater than or equal to the first threshold, such that the first time period is directly proportional to the peak value of the inductor current.