An electric assembly includes a reverse conducting switching device and a rectifying device. The reverse conducting switching device includes transistor cells for desaturation configured to be, under reverse bias, turned on in a desaturation mode and to be turned off in a saturation mode. The rectifying device is electrically connected anti-parallel to the switching device. In a range of a diode forward current from half of a maximum rating diode current of the switching device to the maximum rating diode current, a diode I/V characteristic of the rectifying device shows a voltage drop across the rectifying device higher than a saturation I/V characteristic of the switching device with the transistor cells for desaturation turned off and lower than a desaturation I/V characteristic of the switching device with the transistor cells for desaturation turned on.

A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.

A power converter for converting electrical power from a power source to a load, including: a boosting device including a boost rectifier configured to prevent a backflow of a current from the load to the power source, the boosting device being configured to change a voltage of electrical power from the power source to a predetermined voltage; and a commutation device including: a commutation operation device configured to perform a commutation operation of directing a current flowing through the boosting device to an other path; and a commutation rectifier including a plurality of rectifiers and connected in series on the other path, the commutation rectifier being configured to rectify a current relating to commutation, thereby reducing a capacitance component.

A Si diode is used as a rectifying diode on a transformer secondary side of an isolated DC/DC converter, and a high-voltage Schottky barrier diode made of a wide bandgap semiconductor is used as a free-wheeling diode arranged between a rectifier circuit and a smoothing reactor. Thus, there may be provided an in-vehicle charger capable of suppressing a diode recovery surge voltage with a circuit configuration that is simpler and suppressed in cost increase as compared to a case where a related-art synchronous rectifier circuit system is employed.

A snubber circuit connected to a rectifying circuit including a reference potential node, an output potential node, and the snubber circuit comprises a snubber capacitor; a snubber diode; and a snubber resistor, wherein a negative electrode of the snubber capacitor is connected to the reference potential node, an anode of the snubber diode is connected to the switch node and a cathode of the snubber diode is connected to a positive electrode of the snubber capacitor, one end of the snubber resistor is connected to the positive electrode of the snubber capacitor, and another end of the snubber resistor is connected to the output potential node, and a reverse recovery time of the snubber diode is longer than a reverse recovery time of the rectifying element.

A control method and a control circuit for a switching power supply circuit and the switching power supply circuit. The switching power supply circuit includes a main switching transistor, a synchronous rectifier and an inductive element. When a switching signal indicates that the synchronous rectifier is turned from on to off, and the main switching transistor is turned from off to on, a gate voltage of the synchronous rectifier is pulled down to be lower than a threshold voltage of the synchronous rectifier and higher than a zero voltage by using a resistor-capacitor delay effect and timing is started. When a gate voltage of the main switching transistor is detected to rise to a first voltage or the timing reaches a first time, the gate voltage of the synchronous rectifier is pulled down to the zero voltage.

The present disclosure provides a forward converter with secondary LCD connected in series to realize excitation energy transfer, comprising a forward converter main circuit and an energy transfer and transmission circuit. The forward converter main circuit includes a high-frequency transformer T, a switching tube S, a diode D1, a diode D2, an inductance L1, and a capacitor C1. The energy transfer and transmission circuit includes a diode D3, a capacitor C2, and an inductance L2. The circuit structure of the present disclosure has simple circuit structure and high reliability. And the reverse recovery problem of the diode could be eliminated by the soft switch-off or soft switch-on of the switching tube, which further reducing the loss of switching tube and diodes and improving the overall efficiency. In addition, the excitation energy could be transferred to the load side to improve the energy transmission efficiency.

The present disclosure provides a forward converter with secondary LCD connected in parallel to realize forward and backward energy transmission, comprising a forward converter main circuit and an energy transfer and transmission circuit. The forward converter main circuit includes a high-frequency transformer T, a switching tube S, a diode D1, a diode D2, an inductance L1, and a capacitor C1. The energy transfer and transmission circuit includes a diode D3, a capacitor C2 and an inductance L2.

This application provides a diode discrete device, a circuit with a bypass function, and a converter. The diode discrete device is used in a circuit with a bypass function, and the diode discrete device includes a discrete device package, a first diode, and a second diode. The first diode is a main circuit diode, the second diode is a bypass diode, first performance of the first diode is better than first performance of the second diode, and the first performance includes a reverse recovery charge and reverse recovery time. The first diode and the second diode are packaged into the discrete device package, and an anode of the first diode is connected to an anode of the second diode, or a cathode of the first diode is connected to a cathode of the second diode. The diode discrete device can improve integration and power density of the circuit.

A snubber circuit connected to a rectifying circuit including a reference potential node, an output potential node, and the snubber circuit comprises a snubber capacitor; a snubber diode; and a snubber resistor, wherein a negative electrode of the snubber capacitor is connected to the reference potential node, an anode of the snubber diode is connected to the switch node and a cathode of the snubber diode is connected to a positive electrode of the snubber capacitor, one end of the snubber resistor is connected to the positive electrode of the snubber capacitor, and another end of the snubber resistor is connected to the output potential node, and a reverse recovery time of the snubber diode is longer than a reverse recovery time of the rectifying element.