Disclosed are a power conversion device, an electric range including same, and a control method therefor. The electric range of the present invention comprises: a plate; a working coil; an interface unit; a voltage providing unit for providing a rectified voltage to the working coil; a first switching element; a second switching element connected in parallel with the first switching element; and a control unit, wherein the control unit determines a driving signal for driving at least one of the first switching element and the second switching element, according to the temperatures of the first switching element and the second switching element, and outputs same to the first switching element and the second switching element, and when the rectified voltage is greater than or equal to a predetermined level, the control unit provides the first switching element and the second switching element with driving signals for driving the first switching element and the second switching element, respectively, and when the rectified voltage is less than the level, the control unit transmits a driving signal to a switching element having a lower temperature among the first switching element and the second switching element, and provides an off control signal to the switching element having a higher temperature.

A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

Methods and systems for performing current sense compensation for one or more power stages in a multiphase voltage regulator are described. A controller can be connected to a plurality of power stages through a communication interface. The controller can generate a data packet including a command to obtain temperature information and an address that identifies a specific power stage among the plurality of power stages. The controller can send the data packet to the plurality of power stages using the communication interface. The controller can receive temperature information of the specific power stage from the specific power stage through the communication interface. The controller can compensate a sensed current of the specific power stage based on the received temperature information of the specific power stage.

A power conversion apparatus includes a case having a heat-dissipation property, and including a housing part formed to surround a predetermined space, a resin material having a thermal conductivity, the resin material being provided in the predetermined space, a coil disposed in the predetermined space, a coil case having a shape that fits with the housing part, the coil case being configured to house the coil, and a power semiconductor device disposed along a side wall of the coil case. The power semiconductor device is pressed and fixed between a side wall of the housing part and the side wall of the coil case in a state where a heat dissipation surface is in contact with the side wall of the housing part.

A drive circuit of a power semiconductor element comprises a gate drive voltage generator to generate, based on an ON/OFF drive timing signal input to an input terminal, a gate drive voltage to be applied to a gate electrode of a switching element having the gate electrode for controlling a main current that flows between a first main electrode and a second main electrode, wherein the gate drive voltage generator includes a gate current limiting circuit in which a current limiter to limit a current and a voltage limiter to limit the magnitude of a voltage applied to both ends of the current limiter are connected in parallel.

A power converter according to the present disclosure includes a cooling plate and a plurality of circuit elements. The cooling plate includes a first cooling surface and a second cooling surface on an opposite side from the first cooling surface. The cooling plate is provided with a through hole passing through between the first and second cooling surfaces. The circuit elements convert AC power supplied from an external power source into DC power of a certain voltage and output the DC power. The circuit elements at least include first and second circuit elements. The first circuit element includes a first terminal and is thermally connected to the first cooling surface. The second circuit element includes a second terminal electrically connected to the first terminal and inserted into the through hole, and is thermally connected to the second cooling surface.

There are provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where a connection section used for the connection to a semiconductor element is arranged and a manufacturing method for a semiconductor module. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have through holes where sealing resins are formed, the sealing resins connecting adjacent housing sections and the sealing resin formed in the through hole being continuous with the sealing resins formed in the housing sections.

A switch-mode power supply waste heat recovery and utilization system includes a switch-mode power supply unit, an air conditioner and a water storage tank that are all connected with pipes. The switch-mode power supply unit, the air conditioner and the water storage tank are in communication with each other through the pipes. The switch-mode power supply unit includes a cabinet. Fixed plates are fixedly connected to an inner side wall of the cabinet and arranged at equal intervals. A top and a bottom of the cabinet and respective interiors of the fixed plates are formed with cavities. The pipes are in communication with the cavities. A fan is fixedly connected to a side wall of the water storage tank, and is matched with the water storage tank. A filter screen is insertedly connected to an inner side wall of the water storage tank. A filter cotton is horizontally provided under the filter screen.

A semiconductor device includes a semiconductor element, a joint material, a heat spreader, and a sealing resin. The semiconductor element includes a main surface. The main surface has a first outer periphery. The sealing resin seals the semiconductor element, the joint material, and the heat spreader. The heat spreader includes a main body and a protrusion. The protrusion is joined to the main surface by the joint material. The main surface has an exposed surface. The exposed surface is located between the first outer periphery and the joint material. The first outer periphery and the exposed surface are exposed from the joint material. The first outer periphery and the exposed surface are sealed with the sealing resin.

The semiconductor device according to the present invention includes a semiconductor module, a cooling member, and a heat transfer member. The semiconductor module includes a switching element and a diode connected in antiparallel to each other. The heat transfer member is disposed between the semiconductor module and the cooling member so as to transfer heat generated by the switching element and the diode to the cooling member. The heat transfer member has a mounting surface on which the switching element and the diode are mounted side by side and a surface which is opposite to the mounting surface and is disposed in contact with the cooling member. In the heat transfer member, the thermal conductivity in a first direction parallel to the mounting surface is higher than the thermal conductivity in a second direction perpendicular to the mounting surface.