A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.

Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.

An oscillator disclosed herein includes an oscillation circuit including a negative resistance element, a voltage bias circuit applying voltage to the oscillation circuit. The oscillator further includes a switch provided in a path, in which the voltage bias circuit and the oscillation circuit are electrically coupled to each other, and implementing switching between a conductive state and a non-conductive state of the path, and a constant voltage element electrically coupled in parallel to the switch.

Provided is an element that can reduce a parasitic oscillation. An element used for an oscillation or a detection of a terahertz wave includes a resonance unit 108 including a first conductor 102, a second conductor 105, a dielectric 104 arranged between the first conductor and the second conductor, a first negative resistance element 101a and a second negative resistance element 101b mutually connected in parallel between the first conductor and the second conductor, a bias circuit 120 that supplies a bias voltage to each of the first negative resistance element and the second negative resistance element, and a line 103 that connects the bias circuit to the resonance unit, and the element is configured in a manner that a mutual injection locking in a positive phase between the first negative resistance element and the second negative resistance element is unstable, and a mutual injection locking in a reversed phase between the first negative resistance element and the second negative resistance element becomes stable.

Provided is an element that can reduce a parasitic oscillation. An element used for an oscillation or a detection of a terahertz wave includes a resonance unit 108 including a first conductor 102, a second conductor 105, a dielectric 104 arranged between the first conductor and the second conductor, a first negative resistance element 101a and a second negative resistance element 101b mutually connected in parallel between the first conductor and the second conductor, a bias circuit 120 that supplies a bias voltage to each of the first negative resistance element and the second negative resistance element, and a line 103 that connects the bias circuit to the resonance unit, and the element is configured in a manner that a mutual injection locking in a positive phase between the first negative resistance element and the second negative resistance element is unstable, and a mutual injection locking in a reversed phase between the first negative resistance element and the second negative resistance element becomes stable.

A device for controlling a switching mode power supply includes a regulation module, a feedback node, and a resistance module. The regulation module is adapted to cause a switching module to selectively couple, based on an oscillation frequency, a primary side winding of a transformer and a supply to control a voltage, current, or power output at a secondary side winding of the transformer. The feedback node is adapted to receive an indication of a voltage at the secondary side winding of the transformer. The resistance module is adapted to selectively set a pull-up resistance based on a comparison between a time-controlled frequency and a voltage-controlled frequency that is generated based on a voltage at the feedback node, wherein the regulation module is adapted to set the oscillation frequency as the time-controlled frequency or the voltage-controlled frequency.

Provided is an element that can reduce a parasitic oscillation. An element used for an oscillation or a detection of a terahertz wave includes a resonance unit 108 including a first conductor 102, a second conductor 105, a dielectric 104 arranged between the first conductor and the second conductor, a first negative resistance element 101a and a second negative resistance element 101b mutually connected in parallel between the first conductor and the second conductor, a bias circuit 120 that supplies a bias voltage to each of the first negative resistance element and the second negative resistance element, and a line 103 that connects the bias circuit to the resonance unit, and the element is configured in a manner that a mutual injection locking in a positive phase between the first negative resistance element and the second negative resistance element is unstable, and a mutual injection locking in a reversed phase between the first negative resistance element and the second negative resistance element becomes stable.

Provided is an element that can reduce a parasitic oscillation. An element used for an oscillation or a detection of a terahertz wave includes a resonance unit 108 including a first conductor 102, a second conductor 105, a dielectric 104 arranged between the first conductor and the second conductor, a first negative resistance element 101a and a second negative resistance element 101b mutually connected in parallel between the first conductor and the second conductor, a bias circuit 120 that supplies a bias voltage to each of the first negative resistance element and the second negative resistance element, and a line 103 that connects the bias circuit to the resonance unit, and the element is configured in a manner that a mutual injection locking in a positive phase between the first negative resistance element and the second negative resistance element is unstable, and a mutual injection locking in a reversed phase between the first negative resistance element and the second negative resistance element becomes stable.