The oscillation circuit includes a drive circuit and an amplitude limiting circuit. A vibrator-output signal is input to the drive circuit from one end of the vibrator, and the drive circuit outputs a drive signal obtained by inverting the vibrator-output signal. The amplitude limiting circuit is disposed between an output node of the drive circuit and the other end of the vibrator, and outputs an amplitude-limited drive signal obtained by reducing an amplitude of the drive signal to the other end of the vibrator.

The invention relates to an oscillator comprising two resonators, the direction of the vector of acceleration sensitivity of at least one first resonator of the at least two resonators, said direction being relative to the mounting surface of said first oscillator, corresponding substantially to the reflected direction that is reflected by a mirror plane of the vector of acceleration sensitivity of at least one second resonator of the at least two resonators, said direction being relative to the mounting surface of said second oscillator. The invention also relates to an oscillator comprising two resonators, the oscillator comprising a resistor which is effectively connected in parallel with one of the resonators and the resistance value of which is less than a hundred times that of the series resonator resistance of the combined resonator at the desired resonant frequency.

The present invention relates to systems including an acoustic wave resonator and an active shunt capacitance cancelling oscillator circuit. Such systems can be used in biosensing methods, while avoiding impedance distortion and phase shift anomalies.

A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 20.78W/T22.10, where W is a length of a short side and T is a thickness.

A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

A nano-electro-mechanical systems (NEMS) oscillator can include an insulating substrate, a source electrode and a drain electrode, a metal local gate electrode, and a micron-sized, atomically thin graphene resonator. The source electrode and drain electrode can be disposed on the insulating substrate. The metal local gate electrode can be disposed on the insulating substrate. The graphene resonator can be suspended over the metal local gate electrode and define a vacuum gap between the graphene resonator and the metal local gate electrode.

A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 m root mean square (RMS).

A nano-electro-mechanical systems (NEMS) oscillator can include an insulating substrate, a source electrode and a drain electrode, a metal local gate electrode, and a micron-sized, atomically thin graphene resonator. The source electrode and drain electrode can be disposed on the insulating substrate. The metal local gate electrode can be disposed on the insulating substrate. The graphene resonator can be suspended over the metal local gate electrode and define a vacuum gap between the graphene resonator and the metal local gate electrode.