A method of quantum processing using a quantum processor comprising a plurality of Kerr non-linear oscillators (KNOs), each operably drivable by both i) a controllable single-boson drive and ii) a controllable two-boson drive, the method comprising simultaneously controlling a drive frequency and a drive amplitude of the controllable single-boson drives to define a problem and controlling a drive frequency and a drive amplitude of the two-photon drives to define the Hilbert space, including increasing the amplitude of the two-boson drive and reaching both amplitude conditions a) 4 times the amplitude of the two-boson drives being greater than the loss rate, and b) the amplitude of the two-boson drives being greater than the amplitude of the single-boson drive, and maintaining both amplitude conditions a) and b) until a solution to the problem is reached; and reading the solution.

An optoelectronic oscillator (OEO) is disclosed comprising an electronically tunable filter for transposing narrow pass band characteristics of a surface acoustic wave (SAW) filter to a microwave frequency to provide mode selection in the OEO. An OEO is disclosed comprising a set of optical domain components, a downconverter in communication with an output of the optical domain components, and a set of radio frequency (RF) domain components in communication with an output of the downconverter. The set of RF domain components comprises a tunable filter operating at a filter center frequency and having an output coupled to the set of optical domain components for communicating a mode selection result. The tunable filter including a tuner; and a sub-filter. The sub-filter operating at a fixed center frequency to provide mode selection and adjacent mode suppression with respect to the tunable filter center frequency. The sub-filter center frequency being lower than the tunable filter center frequency, and a ratio of the tunable filter center frequency to a bandwidth of the sub-filter being at least 1000:1.

A quantum interference device includes: an atomic cell in which alkali metal is sealed; a light source that emits light that excites the alkali metal; a light source temperature adjuster that adjusts temperature of the light source; a light receiver that receives light transmitted through the atomic cell and outputs an output signal in accordance with a light reception intensity; a detector that outputs an output signal in accordance with a chronological change in an amount of the light transmitted through the atomic cell based on the output signal of the light receiver; and a light source temperature controller that controls driving of the light source temperature adjuster based on the output signal of the detector.

A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

A quantum interference device includes an atom cell module including an atom cell in which alkali metal is encapsulated, a light source that emits light adapted to excite the alkali metal, and a heater that heats the atom cell and the light source, a package that houses the atom cell module, and a controller adapted to control drive of the heater so that the light source becomes at a set temperature, R(TvTout)/Qv is satisfied, where R [ C./W] is a thermal resistance between the atom cell module and the package, Tv [ C.] is the set temperature, Tout [ C.] is an upper limit value of a usage environmental temperature set to a value lower than the set temperature, Qv [W] is an amount of heat generation of the light source.

An apparatus with an oscillating circuit, which is excitable by means of an alternating signal source. The oscillating circuit includes a non-linear circuit element. The apparatus is designed so that the non-linear circuit element is operable in a non-linear operating range and with a frequency above its limiting frequency.

An oscillator circuit portion 200 including a resonator 216 arranged to oscillate with a resonant frequency, a capacitor 208 arranged to provide charge to the resonator, a first switch 206 arranged to connect the capacitor to an input voltage to charge the capacitor, a second switch 210 arranged to connect the resonator to the capacitor, and a timing circuit 202 configured to generate periodically a first pulse PULSE_L and a second pulse PULSE_H. The first pulse is configured to close the first switch, the second pulse is configured to close the second switch, and the first and second switches are arranged to be open when the timing circuit is not generating the first or second pulses, to maintain oscillation of the resonator.

In absence of electrical approaches for realization of highly stable RF oscillator, opto-electronic oscillators (OEO) techniques are provided, where self-forced oscillation techniques using long optical delays demonstrate significant short-term and long-term frequency stability. Fully integrated opto-electronic oscillator chip (IOEC) may be the most efficient realization of an RF frequency synthesizer in terms of operation frequency (covering microwave and millimeter wave), size (<10 cm.sup.3), ruggedness to environmental effects of temperature (40 to 80 C), vibration (up to 40 g), low timing jitter (<5 fs for 40 GHz carrier), and wall-plug efficiency (output power >10 dBm from under 1 W power). A free-running III-V (primarily InP) based multi-mode laser (MML) diodes is designed with large mode number (e.g., over 60 modes) and intermodal oscillation frequency compatible with desired RF carrier signal (e.g., 1-40 GHz).