A resonant tank includes a first capacitor formed on a semiconductor substrate, a first inductor formed on the semiconductor substrate, a second capacitor formed on the semiconductor substrate, and a second inductor formed on the semiconductor substrate. The first capacitor, the first inductor, the second capacitor, and the second inductor are connected in a ring configuration, with each capacitor connected between a pair of the inductors and with each inductor connected between a pair of the capacitors. An amplifier circuit is coupled to the resonant tank and configured to amplify a signal in the resonant tank.

Disclosed is a system and method for power line control of electrical fans. The system generates a sinusoidal wave using a crystal oscillator. Control information is added to the sinusoidal wave by routing the wave through a phase inversion circuit a predetermined intervals according to a protocol. The resulting control signal is sent on a power line. The control signal is received using a crystal filter, decoded and converted to executable instructions for controlling a fan motor.

A resonant tank includes a first capacitor formed on a semiconductor substrate, a first inductor formed on the semiconductor substrate, a second capacitor formed on the semiconductor substrate, and a second inductor formed on the semiconductor substrate. The first capacitor, the first inductor, the second capacitor, and the second inductor are connected in a ring configuration, with each capacitor connected between a pair of the inductors and with each inductor connected between a pair of the capacitors. An amplifier circuit is coupled to the resonant tank and configured to amplify a signal in the resonant tank.

Certain aspects relate to a semiconductor die. The semiconductor die includes a voltage-controlled oscillator (VCO), wherein the VCO includes a resonant capacitor, and a resonant inductor coupled in parallel with the resonant capacitor. The resonant inductor includes a first elongated portion and a second elongated portion that are parallel with each other. The semiconductor die also includes a voltage supply line configured to route a supply voltage to the VCO, wherein the voltage supply line includes a first portion that runs parallel with the first and second elongated portions of the resonant inductor and is located between the first and second elongated portions of the resonant inductor.

A voltage controlled oscillator (VCO) is disclosed to provide reduced phase noise at higher operating frequencies. A buffer-first VCO configured according to an embodiment includes multiple VCO core circuits configured to provide synchronously tuned oscillator signals. Each VCO core circuit is coupled to a summing node through a buffer circuit that generates uncorrelated phase noise such that the summing node provides a summation output of the oscillator signals with reduced phase noise. A multiplexer-less VCO configured according to an embodiment includes multiple buffer-first VCO circuits configured to provide oscillator signals covering a range of frequencies. Each buffer-first VCO circuit is controlled or selected by an enable signal. Buffer circuits are configured to select one of the buffer-first VCO circuits for coupling to a transmission line during a given time period based on the enable signal. The transmission line is terminated in a matched impedance at each end of the line.

A standing wave oscillator is described. The standing wave oscillator includes a transmission line, and an even number of gain stages. Each gain stage is connected to the transmission line, and each gain stage is located at a respective location along a length of the transmission line. The gain stages are configured to generate a standing wave oscillator signal along the length of the transmission line, when a supply voltage is applied to at least one end of the transmission line. The location of each gain stage is non-coincidental with an expected location of maximum amplitude of the standing wave oscillator signal.

A spin torque oscillation generator includes a spin reference layer and a spin oscillation layer. The spin reference layer has a first magnetization direction. The spin reference layer is configured to receive a current and generate a spin-polarized current. The spin oscillation layer has a second magnetization direction. The second magnetization direction is different than the first magnetization direction. The spin oscillation layer is configured to receive the spin-polarized current from the spin reference layer. The spin-polarized current generates a spin torque based on the second magnetization direction of the spin oscillation layer. The spin torque generates a spin torque output signal.

A high-power transmitter with a fully-integrated phase Iocking capability is disclosed and characterized. Also provided herein is a THz radiator structure based on a return-path gap coupler, which enables the high-power generation of the disclosed transmitter, and a self-feeding oscillator suitable for use with the transmitter.

A voltage controlled oscillator (VCO) is disclosed to provide reduced phase noise at higher operating frequencies. A buffer-first VCO configured according to an embodiment includes multiple VCO core circuits configured to provide synchronously tuned oscillator signals. Each VCO core circuit is coupled to a summing node through a buffer circuit that generates uncorrelated phase noise such that the summing node provides a summation output of the oscillator signals with reduced phase noise. A multiplexer-less VCO configured according to an embodiment includes multiple buffer-first VCO circuits configured to provide oscillator signals covering a range of frequencies. Each buffer-first VCO circuit is controlled or selected by an enable signal. Buffer circuits are configured to select one of the buffer-first VCO circuits for coupling to a transmission line during a given time period based on the enable signal. The transmission line is terminated in a matched impedance at each end of the line.

A resonant tank includes a first capacitor formed on a semiconductor substrate, a first inductor formed on the semiconductor substrate, a second capacitor formed on the semiconductor substrate, and a second inductor formed on the semiconductor substrate. The first capacitor, the first inductor, the second capacitor, and the second inductor are connected in a ring configuration, with each capacitor connected between a pair of the inductors and with each inductor connected between a pair of the capacitors. An amplifier circuit is coupled to the resonant tank and configured to amplify a signal in the resonant tank.