An illumination apparatus includes a case, a plurality of oscillators configured to generate electromagnetic waves, and housed in the case and arranged two-dimensionally, a window unit configured to emit therefrom the electromagnetic waves, and disposed on a first side of the case, a plurality of inflow holes configured to allow fluid to flow into the case, and disposed at positions at which the electromagnetic waves from the window unit propagate, and a discharging unit configured to discharge the fluid, which has flowed into the case, out of the case, and disposed on a second side of the case, which is an opposite side to the first side. When the oscillator is viewed from the window unit, a part of the oscillator is located on an inner side of the inflow hole, and the fluid which has flowed into the case through the inflow hole reaches the oscillator.

A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

There is provided a terahertz device including: a terahertz element configured to generate an electromagnetic wave; a reflection film provided at a position facing the terahertz element and configured to reflect the electromagnetic wave generated from the terahertz element in one direction; and an encapsulating material configured to encapsulate the terahertz element and the reflection film.

An unbalanced terahertz frequency doubler circuit with power handling capacity is provided, and the circuit includes a RF input waveguide, a quartz substrate and a RF output waveguide, where one end of the quartz substrate is disposed in a waveguide groove of the RF input waveguide and the other end of the quartz substrate is disposed in a waveguide groove of the RF output waveguide, where an input transition microstrip is disposed on the quartz substrate, and one end of the transition microstrip is connected to an output transition microstrip sequentially through a first transmission microstrip, a low pass filter, a RF matching microstrip and a second transmission microstrip, where anodes of four GaAs-based terahertz frequency multiplier diode groups are connected to the RF matching microstrip, and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups is connected to a grounding quartz strip.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

The present application discloses an unbalanced terahertz frequency doubler circuit with power handling capacity including a RF input waveguide, a quartz substrate and a RF output waveguide, where one end of the quartz substrate is disposed in a waveguide groove of the RF input waveguide and the other end of the quartz substrate is disposed in a waveguide groove of the RF output waveguide, where an input transition microstrip is disposed on the quartz substrate, and one end of the transition microstrip is connected to an output transition microstrip sequentially through a first transmission microstrip, a low pass filter, a RF matching microstrip and a second transmission microstrip, where anodes of four GaAs-based terahertz frequency multiplier diode groups are connected to the RF matching microstrip, and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups is connected to a grounding quartz strip.

One aspect of the present disclosure provides a terahertz-wave detector including a semiconductor substrate, an active element formed on the semiconductor substrate and a first resistive portion electrically connected in parallel with the active element.

A device and method for terahertz signal generation are disclosed. Oscillators are arranged in a two-dimensional array, each oscillator connected to a corresponding antenna. Each oscillator is unidirectional connected to its adjacent oscillators by a phase shifter. A method for generating a steerable terahertz signal utilizes an array of oscillators connected by corresponding phase shifters. A terahertz signal having a fundamental frequency is generated using the array. The phase shift of one or more of the phase shifters is varied in order to vary the fundamental frequency and/or steer the signal generated by the array.

A high-power transmitter with a fully-integrated phase Iocking capability is disclosed and characterized. Also provided herein is a THz radiator structure based on a return-path gap coupler, which enables the high-power generation of the disclosed transmitter, and a self-feeding oscillator suitable for use with the transmitter.