A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

Systems and methods which provide injection-locked circuit configurations for radiating signals in the terahertz frequency range with improved phase noise and signal output power are described. Embodiments of the invention provide an injection-locked terahertz radiator system comprising a half-quadrature voltage controlled oscillator (HQVCO), a plurality of injection-locked frequency quadruplers (ILFQs), and antenna elements. In operation according to embodiments, injection-locking provided by the ILFQs may be utilized to facilitate individual optimization of the output power and the phase noise. Intrinsic-delay compensation and harmonic boosting techniques may be utilized in configurations of the foregoing injection-locked terahertz radiator system to optimize the phase noise of the HQVCO and the output power of the ILFQs, respectively. Embodiments of an injection-locked terahertz radiator system herein are implemented as a fully integrated solution with compact form factor, providing high reliability and low cost.

The THz device module includes: a substrate; a THz device disposed on a front side surface of the substrate, and configured to oscillate or detect THz waves; a cap covering the THz device being separated from the THz device, and comprising an opening formed at a position opposite to the THz device in a vertical direction of the front side surface of the substrate; and a sealing member covering the opening of the cap so as to seal the THz device in conjunction with the substrate and the cap. A distance from the THz device to the sealing member is within a near-field pattern to which an electric field of the THz waves can be reached without interruption from a surface of the THz device to the sealing member. The THz device module efficiently emits or detects THz waves from the opening, thereby suppressing upsizing of the cap.

A high-power transmitter with a fully-integrated phase Iocking capability is disclosed and characterized. Also provided herein is a THz radiator structure based on a return-path gap coupler, which enables the high-power generation of the disclosed transmitter, and a self-feeding oscillator suitable for TS use with the transmitter.

A terahertz module includes: a terahertz chip which includes an active device which emits a terahertz wave; and a dielectric substrate coupled to the terahertz chip. The terahertz chip includes a semiconductor substrate. The active device is disposed on an upper surface of the semiconductor substrate. A cutout is formed in a portion of a first side surface, among a plurality of side surfaces of the dielectric substrate, the cutout extending from an upper side of the first side surface to a lower side of the first side surface. The terahertz chip is fit into the cutout in such a direction that the upper surface of the semiconductor substrate is parallel to the first side surface and the semiconductor substrate is arranged in a bottom side of the cutout.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An oscillator for high-frequency signal generation is disclosed. Provided according to the present invention is an oscillator for high-frequency signal generation comprising: a first transistor comprising a first collector for receiving a power supply voltage from a load, a first base connected to a ground, and a first emitter connected to the first base; and a second transistor comprising a second collector for receiving a power supply voltage from the load, a second base connected to a ground, and a second emitter connected to the second base, the oscillator having a common-base cross-coupled structure in which the first collector and the second emitter are cross-coupled and the second collector and the first emitter are cross-coupled.

A device and method for terahertz signal generation are disclosed. Oscillators are arranged in a two-dimensional array, each oscillator connected to a corresponding antenna. Each oscillator is unidirectional connected to its adjacent oscillators by a phase shifter. A method for generating a steerable terahertz signal utilizes an array of oscillators connected by corresponding phase shifters. A terahertz signal having a fundamental frequency is generated using the array. The phase shift of one or more of the phase shifters is varied in order to vary the fundamental frequency and/or steer the signal generated by the array.

In an antenna array including first through fifth antennas, the second, first, and third antennas are arranged in this order in a first direction, and the fourth, first, and fifth antennas are arranged in this order in a second direction. A conductor layer of the second antenna is connected to a conductor layer of the first antenna via a first coupling line extending in the first direction, the conductor layer of the first antenna is connected to a conductor layer of the third antenna via a second coupling line extending in the first direction, a conductor layer of the fourth antenna is connected to the conductor layer of the first antenna via a third coupling line extending in the second direction, and the conductor layer of the first antenna is connected to a conductor layer of the fifth antenna via a fourth coupling line extending in the second direction.

A terahertz device includes: a support substrate; a terahertz element that is mounted to the support substrate and that emits an electromagnetic wave in a terahertz band; and a reflection body that is disposed on the opposite side to an element rear surface with respect to an element main surface in a z direction and at an interval in the z direction from the element main surface and that has a reflection surface for reflecting, in a direction crossing the z direction, an electromagnetic wave emitted in the z direction by the terahertz element.