A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz. The invention can be realized by using micro-processing technology, and the preparation process is mature and reliable.

One aspect of the present disclosure provides a terahertz-wave detector including a semiconductor substrate, an active element formed on the semiconductor substrate and a first resistive portion electrically connected in parallel with the active element.

A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probewaveguide structure.

This application discloses a variable capacitor, a reflection-type phase shifter, and a semiconductor device, which relate to the technical field of electronics, so as to resolve the problem that a capacitance value of a variable capacitor is sensitive to changes in PVT. The variable capacitor includes: a first comb structure and a first set of fingers, where the first comb structure includes a plurality of comb teeth, the first set of fingers includes at least one finger, and the finger in the first set of fingers is disposed between at least two comb teeth of the first comb structure, without electrical contact; a second comb structure and a second set of fingers, where the second comb structure includes a plurality of comb teeth.

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

An electromagnetic wave modulation module includes: an input terminal to which an electric signal of a specific frequency is input; a metal pattern that modulates an electromagnetic wave generated by the input electric signal of the specific frequency into a longitudinal wave; and an output terminal that outputs an electric signal that generates a longitudinal wave modulated and adjusted by the metal pattern. An electromagnetic wave modulation module capable of generating a longitudinal wave with a simple configuration is provided by using an electric signal oscillator manufactured with a semiconductor chip

Embodiments of the present application provide a display screen and a wireless communication device. The display screen includes: a substrate including a modulation circuit; a functional layer provided on the substrate and including a plurality of reflecting units, where the reflecting unit is configured to reflect a wireless signal and is connected to the modulation circuit, and the modulation circuit is configured to adjust at least one of an amplitude and a phase of an electrical signal on the reflecting unit; and a shielding layer provided on a side of the functional layer facing the substrate.

In various aspects, a device for reversibly modulating electromagnetic radiation may be provided. The device may include a base substrate. The device may include a patterned metal layer disposed over the base substrate. The patterned metal layer may include a plurality of electrodes separated by a gap and at least one additional metal pattern separated from the plurality of electrodes. The gap may define an active area through which radiation is passed. The device may include an organic layer disposed over at least the plurality of electrodes, and base substrate, and within the gap. The organic layer may include a conducting polymer. The device may include an ion gel disposed over the conducting polymer, the patterned metal layer, and the base substrate. The device may be configured to allow ions from the ion gel layer to transport into the conducting polymer.