H03D7/125

Two-port mixers and systems, receivers, and methods using same

Examples of receivers and receiver techniques are described herein. An example system may include a carrier source that may provide a wireless carrier signal and a wireless communication device, separate from the carrier source. The wireless communication device may provide a wireless communication signal containing data. A receiver may include an antenna positioned to receive the wireless carrier signal and the wireless communication signal, a two-port mixer coupled to the antenna and configured to mix the wireless carrier signal and the wireless communication signal to provide an intermediate frequency signal, and a demodulator configured to extract, at least in part, the data from the intermediate frequency signal.

Source injection mixer

A source injection mixer includes an FET, an IF matching circuit between an IF port and a gate of the FET, and that matches impedance of the IF port and impedance of the gate as viewed from the IF port, a shorting stub of which one end is connected to a source of the FET and another end is grounded, and shorter than ¼ of an electric length at a frequency of LO signals, an LO matching circuit between an LO port and the source of the FET, and that matches impedance of the LO port and impedance of the source as viewed from the LO port, and an RF matching circuit between an RF port and a drain of the FET, and that matches impedance of the RF port and impedance of the drain as viewed from the RF port.

Mixing circuit

The present invention is to provide a mixing circuit, comprising: a first transistor; a second transistor; a third transistor; a first connection point connected to a gate terminal of the first transistor, a drain terminal of the second transistor and a source terminal of the third transistor; a second connection point connected to a source terminal of the first transistor and a gate terminal of the second transistor; and a third connection point connected to a drain terminal of the first transistor and a drain terminal of the third transistor.

Systems and methods for detecting local oscillator leakage and image tone in I/Q mixer based transceivers

A detector circuit includes: a squaring circuit configured to receive an output of a power amplifier of a radio transmitter and to produce an output current, the output of the power amplifier including: a desired tone; a local oscillator leakage tone; and an image tone, and the output current of the squaring circuit including: a direct current (DC) component including a function of the desired tone and an alternating current (AC) component; and a DC current absorber electrically connected to an output terminal of the squaring circuit, the DC current absorber being configured to filter out the DC component of the output current of the squaring circuit to produce a filtered output of the squaring circuit, the filtered output including the AC component including functions of the local oscillator leakage tone and the image tone.

Device for generating radiofrequency signals in phase quadrature

An embodiment integrated electronic device comprises a mixer module including a voltage/current transconductor stage including first transistors and connected to a mixing stage including second transistors, wherein the mixing stage includes a resistive degeneration circuit connected to the sources of the second transistors and a calibration input connected to the gates of the second transistors and intended to receive an adjustable calibration voltage, and the sources of the first transistors are directly connected to a cold power supply point.

Current-mode signal path of an integrated radio frequency pulse generator

One or more systems, devices and/or methods of use provided herein relate to a device that can support a signal generation. A current-mode end-to-end signal path can include a digital to analog converter (DAC) operating in current-mode and an upconverting mixer, operating in current-mode and operatively coupled to the DAC. Analog inputs and outputs of the DAC and upconverting mixer can be represented as currents, and the DAC can generate a baseband signal. The DAC and upconverting mixer each can comprise switching transistors of the same type, such as p-type metal-oxide semiconductor (PMOS) switching transistors. In one or more embodiments, a current source and a diode-connected transistor can be arranged in parallel in the current-mode signal path, and the current source passes a static current, while the diode-connected transistor passes both a static current and a dynamic current.

Room-temperature semiconductor maser and applications thereof

A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.

Frequency mixer including non-linear circuit

Disclosed is a frequency mixer. The frequency mixer includes a first matching circuit that generates a matched local oscillator (LO) signal based on an LO signal, a non-linear circuit that generates a non-linear LO signal based on the matched LO signal, a second matching circuit that generates a matched radio frequency (RF) signal based on an RF signal, a mixing circuit that generates a mixed signal based on a mixing of the non-linear LO signal and the matched RF signal, a third matching circuit that generates an intermediate frequency (IF) signal based on the mixed signal, wherein the non-linear circuit includes a non-linear transistor, a bias transistor, and an internal matching circuit connected in series.

Frequency mixing device

Provided is a FET resistive frequency mixing device having improved RF-LO and IF-LO isolations. The frequency mixing device includes: a field effect transistor (FET), a local oscillation matching circuit connected to a gate of the FET to transfer a local oscillation signal to the gate of the FET, a gate biasing circuit connected to the gate of the FET, a radio frequency (RF) matching circuit having a first terminal connected to a drain side of the FET and a second terminal serving as a RF terminal to receive or output a RF signal, an intermediate frequency (IF) matching circuit having a first terminal connected to the drain side of the FET and a second terminal serving as an IF terminal to receive or output an IF signal, and a series resonance circuit providing a path from the drain of the FET to ground for the local oscillation signal.

Mixer

A negative capacitance circuit is connected between a drain and a source of the mixer transistor. With this configuration, the negative capacitance circuit is connected in parallel to a parasitic capacitance generated between the drain and the source of the mixer transistor, and the parasitic capacitance can be canceled out in a wide band by the negative capacitance circuit connected in parallel.