An embodiment includes an apparatus comprising: a non-planar fm having first, second, and third portions each having major and minor axes and each being monolithic with each other; wherein (a) the major axes of the first, second, and third portions are parallel with each other, (b) the major axes of the first and second portions are non-collinear with each other, (c) each of the first, second, and third portions include a node of a transistor selected from the group comprising source, drain, and channel, (e) the first, second, and third portions comprise at least one fmFET. Other embodiments are described herein.

Apparatus includes: a mixer configured to mix local a oscillator signal with a baseband signal and output a radio frequency (RF) signal; a first load coupled to the mixer and tuned to an operating frequency; and a second load coupled to the mixer and tuned to a predetermined multiple of the operating frequency.

To provide a mixer and a semiconductor device which each have a small circuit area and each of which operation capability is inhibited from being decreased due to heat. The mixer includes a differential portion, a current source, a first load, an input terminal, and a first output terminal; the differential portion includes a first and a second transistor; and each of the first and the second transistors includes a metal oxide in a channel formation region. A first terminal of each of the first and the second transistors is electrically connected to the input terminal and a current source and a second terminal of the first transistor is electrically connected to a first terminal of the first load and the first output terminal. The first load has a function of supplying a current between the first terminal and a second terminal of the first load by application of voltage to the second terminal of the first load, and the current source has a function of supplying a constant current to the current source from the first terminal of each of the first and the second transistors. The current source includes a transistor including silicon in a channel formation region, and the differential portion is positioned above the current source.

A current mixer is including a mixing section including a first impedance, a second impedance, a first transistor coupled to the first impedance, a second transistor coupled to the second impedance, a third transistor coupled to the first impedance, a fourth transistor coupled to the second impedance, a fifth transistor coupled to the first and second impedance, a sixth transistor coupled to the third and fourth impedance, a seventh transistor coupled to the first impedance and to the first transistor, and an eighth transistor coupled to the second impedance and fourth transistor; and a replica path including a first replica transistor, a second replica transistor coupled to the first replica transistor, and a third replica transistor coupled to the first replica transistor.