Circuitry includes a first RF power amplifier, a second RF power amplifier, a third RF power amplifier, a first bias signal generator, and a second bias signal generator. The first RF power amplifier and the second RF power amplifier are each configured to amplify RF signals for transmission in a first carrier network. The third RF power amplifier is configured to amplify RF signals for transmission in a second carrier network. In a first mode, the first bias signal generator provides a bias signal to the first RF power amplifier and the second bias signal generator provides a bias signal to the second RF power amplifier. In a second mode, the first bias signal generator and the second bias signal generator each provide a portion of a bias signal to the third RF power amplifier.

A compound semiconductor device includes transistors each including a gate electrode, a source electrode, and a drain electrode, wherein out of the transistors, a transistor whose temperature becomes higher during operation has a higher withstand voltage prior to temperature rise due to the operation.

Circuitry includes a first RF power amplifier, a second RF power amplifier, a third RF power amplifier, a first bias signal generator, and a second bias signal generator. The first RF power amplifier and the second RF power amplifier are each configured to amplify RF signals for transmission in a first carrier network. The third RF power amplifier is configured to amplify RF signals for transmission in a second carrier network. In a first mode, the first bias signal generator provides a bias signal to the first RF power amplifier and the second bias signal generator provides a bias signal to the second RF power amplifier. In a second mode, the first bias signal generator and the second bias signal generator each provide a portion of a bias signal to the third RF power amplifier.

Disclosed are a signal processing device and an image display apparatus including the same. The signal processing device includes an amplifier to perform amplification based on an input differential signal, an output driver to output an audio output signal based on an output signal from the amplifier, a reference voltage output device to output a reference voltage in response to power ON, a pre-output driver configured to pre-compensate for an offset voltage and output a compensation signal, based on an output signal from the amplifier after the power ON, and a first switching device disposed between an output terminal of the output driver and an output terminal of the pre-output driver, wherein the output driver operates after the first switching device is turned on in response to the power ON. Accordingly, pop noise and harmonic distortion in case in which power is turned on may be reduced.

Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.

A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.

A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.

According to the present disclosure, a circuit for cancelling an off-set voltage included in an output voltage of an electronic component includes: a first resistor having one end connected to a bias voltage terminal; a second resistor connected to the first resistor, and having one end connected to the bias voltage terminal; a third resistor having one end connected to the first resistor and the other end connected to a ground terminal; and a transistor having one end connected to the second resistor and the other end connected to the ground terminal, and applied with an output voltage including an off-set voltage from a sensor.

An all-JFET operational amplifier provides improved accuracy and lower thermal drift than conventional JFET amplifiers. In some examples, the JFET operation amplifier includes an input stage including input transistors supplied with equal drain currents by matched current sources. In some examples, the input circuit is stabilized by local current feedback.

A compound semiconductor amplifier includes, on an upper side of a semi-insulating substrate, a compound semiconductor, and an amplifier, wherein the semi-insulating substrate has a substrate thickness for converting a wavelength at a first frequency into a second range of wavelength inside the semi-insulating substrate, and includes, on a lower surface, a metal layer having a sheet resistance value in a third range, the first frequency is a maximum frequency being used in the compound semiconductor amplifier, the second range of wavelength is 1/12 to of the wavelength of the first frequency, and the third range is 3 to 1000 ohms.