Patent classifications
H03F1/3211
VARIABLE GAIN AMPLIFIER CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
A variable gain amplifier circuit includes first and second input terminals, first and second output terminals, first and second transistors respectively having bases electrically connected to the first and second input terminals and having collectors electrically connected to the first and second output terminals, and a degeneration circuit connected between emitters of the first and second transistors. The degeneration circuit has first and second MOS transistors each having two current terminals connected in series between the emitters of the first and second transistors, series resistor circuits, first and second current sources, two resistive elements connected between the first and second current sources and gates of the first and second MOS transistors, and two resistive elements connected between the first and second current sources and two nodes of the series resistor circuits.
Input voltage endurance protection architecture
Provided is an input voltage endurance protection architecture applied to a high-voltage operational amplifier with high input amplitude and high linearity. The input voltage endurance protection architecture includes three parts: a main operational amplifier, an auxiliary operational amplifier and an input stage voltage endurance protection circuit. The main operational amplifier is a high-voltage general-purpose operational amplifier, the auxiliary operational amplifier is a single-stage differential amplifier, and the single-stage differential operational amplifier is connected to a degeneration resistor Rbias. In addition, the auxiliary operational amplifier has a same connection method as the main operational amplifier at a positive input terminal and a negative input terminal, and both the positive input terminal and the negative input terminal are protected by an input stage voltage endurance protection circuit and receive and process input signals simultaneously.
DIFFERENTIAL OUTPUT CIRCUITS WITH CONFIGURABLE HARMONIC REDUCTION CIRCUITS AND METHODS OF OPERATION THEREOF
An electronic circuit includes a differential output circuit that produces a differential output signal at a differential output. A primary winding of a balun has a first balun terminal coupled to a first differential output terminal, and a second balun terminal coupled to a second differential output terminal. A configurable harmonic reduction circuit includes first and second configurable shunt capacitance circuits coupled between the first differential output terminal or the second differential output terminal, respectively, and a ground reference node. A control circuit receives tuning data associated with a calibrated tuning state. The tuning data indicates a first and second calibrated capacitance values, which are unequal, for the first and second configurable shunt capacitance circuits, respectively. The control circuit controls the first configurable shunt capacitance circuit to have the first calibrated capacitance value, and controls the second configurable shunt capacitance circuit to have the second calibrated capacitance value.
Receiver front-end circuit and operating method thereof
A receiver front-end circuit and an operating method thereof are disclosed. The receiver front-end circuit includes a common-mode suppression circuit and a rear-stage circuit. The common-mode suppression circuit is used to receive an external input common-mode voltage signal and perform common-mode noise suppression processing on the external input common-mode voltage signal, and then output an internal input common-mode voltage signal. The rear-stage circuit is coupled to the common-mode suppression circuit and used to receive the internal input common-mode voltage signal. The dynamic swing of the internal input common-mode voltage signal is smaller than the dynamic swing of the external input common-mode voltage signal.
Power amplifier
A power amplifier, for a transmitter circuit is disclosed, which comprises at least one field-effect transistor having a gate terminal and a bulk terminal. The at least one field-effect transistor is configured to receive an input voltage at the gate terminal and a dynamic bias voltage at the bulk terminal. The power amplifier comprises a bias-voltage generation circuit configured to generate the dynamic bias voltage as a nonlinear function of an envelope of input signal. The input voltage is a linear function of the input signal. The bias-voltage generation circuit comprises a rectifier circuit configured to generate a rectified input voltage and an amplifier circuit, operatively connected to the rectifier circuit, configured to generate the dynamic bias voltage based on the rectified input voltage. The amplifier circuit is a variable-gain amplifier circuit and the power amplifier comprises a control circuit configured to tune the gain of the amplifier circuit.
Linear amplifier
A linear amplifier outputs differential signals corresponding to differential signals input to a first signal input terminal and a second signal input terminal, and includes a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor, a third transistor, a fourth transistor, a differential amplifier, and a signal processing circuit. The signal processing circuit includes a first transistor and a second transistor, and includes a resistor as a common voltage output part that outputs a common voltage. The differential amplifier receives the common voltage and a reference voltage, and applies a voltage corresponding to the voltage difference between the common voltage and the reference voltage to the control terminals of the transistors.
Inverter stacking amplifier
The exemplified disclosure presents a highly power efficient amplifier (e.g., front-end inverter and/or amplifier) that achieves significant current reuse (e.g., 6-time for a 3-stack embodiments) by stacking inverters and splitting the capacitor feedback network. In some embodiments, the exemplified technology facilitates N-time current reuse to substantially reduced power consumption. It is observed that the exemplified disclosure facilitates significant current-reuse operation that significantly boost gain gm while providing low noise performance without increasing power usage. In addition, the exemplified technology is implemented such that current reuse and number of transistor has a generally linear relationship and using fewer transistors as compared to known circuits of similar topology.
Stacked segmented power amplifier circuitry and a method for controlling a stacked segmented power amplifier circuitry
A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N) of each of the stacked transistor units (112A, 112B, 112C).
Gain modulation circuit
A gain modulation circuit includes a load circuit, a differential circuit, a current source, a resistor, a first transistor, and a detector circuit. The load circuit is configured to receive a supply voltage. The differential circuit is coupled to the load circuit. The differential circuit and the load circuit are configured to generate a pair of output voltages according to a pair of input voltages and the supply voltage. The current source is coupled to the differential circuit. The resistor is coupled to the differential circuit and the current source. The first transistor is coupled to the differential circuit. The detector circuit is configured to generate a detection signal according to the pair of input voltages. A turned-on degree of the first transistor is adjusted based on the detection signal, to adjust a linear region of the gain modulation circuit.
Wideband amplifier linearization techniques
A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.