H03F3/08

High-speed optical receiver implemented using low-speed light receiving element and method for implementing the same

A high-speed optical receiver implemented using a low-speed light receiving element is provided, which is configured to receive an optical signal having a higher transmission rate than that received using a general avalanche photo diode (APD) by expanding a frequency bandwidth using a receiver circuit configured together with an APD in the optical receiver including the APD, an APD bias control circuit, a transimpedance amplifier (TIA) for amplifying a signal received from the APD to have low noise, and a post amplifier; and a method of implementing such a high-speed optical receiver.

Current-to-voltage conversion circuit, reception apparatus, and imaging system
09746865 · 2017-08-29 · ·

Provided is a current-to-voltage conversion circuit, including: an input/output node configured to input a current signal including a direct current component and an alternating current component, and to output a voltage based on the current signal; an amplification unit configured to input the voltage of the input/output node; an extraction unit configured to output a voltage based on a direct current component of a voltage output from the amplification unit; a first current supply unit configured to supply a current based on the voltage output from the extraction unit to the input/output node; and a second current supply unit configured to supply a current based on the alternating current component of the current signal to the input/output node. The current supplied by the second current supply unit corresponds to a difference between a current of the current signal and the current supplied by the first current supply unit.

Transimpedance amplifier

Disclosed is a transimpedance amplifier, comprising a first-stage trans-conductance amplifier TCA, a second-stage TCA, a third-stage amplifier and a feedback circuit. The first-stage TCA is electrically connected to an input current source to receive a first input signal, and outputs a first output signal. The second-stage TCA is electrically connected to the first-stage TCA to receive the first output signal, and outputs a second output signal. The third-stage amplifier is electrically connected to the second-stage TCA to receive the second output signal, and outputs a third output signal. One end of the feedback circuit is electrically connected to the input of the first-stage TCA, and the other end of the feedback circuit is electrically connected to the output of the third-stage amplifier to stabilize the third output signal. The third-stage amplifier is composed of a first output stage and a second output stage.

Semiconductor device and operation method thereof

In a semiconductor device, power consumption is reduced. Further, a standby circuit is formed of a few elements, and thus increase in the circuit area of the semiconductor device is prevented. The standby circuit provided in the semiconductor device is formed of only one transistor and voltage supplied to the transistor is switched, whereby output current of the semiconductor device is controlled. As a result, the output current of the semiconductor device in a standby state can be substantially zero, so that the power consumption can be reduced. By using an oxide semiconductor for a semiconductor layer of a transistor, leakage current can be suppressed as low as possible.

Semiconductor device and operation method thereof

In a semiconductor device, power consumption is reduced. Further, a standby circuit is formed of a few elements, and thus increase in the circuit area of the semiconductor device is prevented. The standby circuit provided in the semiconductor device is formed of only one transistor and voltage supplied to the transistor is switched, whereby output current of the semiconductor device is controlled. As a result, the output current of the semiconductor device in a standby state can be substantially zero, so that the power consumption can be reduced. By using an oxide semiconductor for a semiconductor layer of a transistor, leakage current can be suppressed as low as possible.

Event-based vision sensor and difference amplifier with reduced noise and removed offset

A circuit configured to amplify a signal from which an offset is cancelled includes an amplifier including an input stage configured to receive an input signal, the amplifier configured to amplify the input signal and output the amplified signal, and a switch including a transistor configured to reset the amplifier in response to a reset signal, the transistor including a body node connecting the transistor to the circuit, the transistor being configured to form a current path between the body node of the transistor and the input stage of the amplifier.

Isolation circuit
11431302 · 2022-08-30 · ·

An isolation circuit and a method for providing isolation between two dies are provided. The isolation circuit includes: an isolation module, configured to generate an isolation signal based on an input signal from a first die and to provide isolation between the first die and a second die, where the isolation signal is smaller than the input signal in amplitude, and the first die is coupled with the second die; a latch module, configured to latch the isolation signal at a certain level and output a latched signal; an amplifier module, configured to amplify the latched signal. In the isolation circuit, a modulation module and a demodulation module can be saved.

Dynamically addressable high voltage optical transformer with integrated optically triggered switches

An optical transformer includes a plurality of light emitters, a plurality of photovoltaic cells positioned to receive light from at least a first subset of the plurality of light emitters, the plurality of photovoltaic cells including at least a first photovoltaic cell and a second photovoltaic cell, and one or more optically triggered switches positioned to receive light from at least a second subset of the plurality of light emitters, the one or more optically triggered switches including at least a first optically triggered switch electrically coupled to the first photovoltaic cell and the second photovoltaic cell. A method of operating the optical transformer is also described.

Dynamically addressable high voltage optical transformer with integrated optically triggered switches

An optical transformer includes a plurality of light emitters, a plurality of photovoltaic cells positioned to receive light from at least a first subset of the plurality of light emitters, the plurality of photovoltaic cells including at least a first photovoltaic cell and a second photovoltaic cell, and one or more optically triggered switches positioned to receive light from at least a second subset of the plurality of light emitters, the one or more optically triggered switches including at least a first optically triggered switch electrically coupled to the first photovoltaic cell and the second photovoltaic cell. A method of operating the optical transformer is also described.

AVALANCHE PHOTODIODE GAIN CONTROL

An avalanche photo-diode (APD) circuit includes a first APD and a bias circuit. The first APD is configured to detect light. The bias circuit is configured to control a gain of the first APD. The bias circuit includes a second APD, a reference voltage source, a bias voltage generation circuit, and a metal layer configured to shield the second APD from the light. The reference voltage source is configured to bias the second APD. The bias voltage generation circuit is configured to generate a bias voltage for biasing the first APD based on dark current output by the second APD.