One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component, and a bias circuit. The power amplifier and the passive component can be on a first die. The bias circuit can be on a second die. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.

A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

A power transistor die includes a semiconductor die with input and output die sides, and a transistor integrally formed in the semiconductor die between the input die side and the output die side, where the transistor has an input and an output (e.g., a gate and a drain, respectively). The power transistor die also includes an input bondpad and a first output bondpad integrally formed in the semiconductor die between the input die side and the transistor. The input bondpad is electrically connected to the input of the transistor. A conductive structure directly electrically connects the output of the transistor to the first output bondpad. A second output bondpad, which also may be directly electrically connected to the transistor output, may be integrally formed in the semiconductor die between the transistor and the output die side.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.

A switch IC includes first, second and third switch units, and an amplifier. The first switch unit and the third switch unit are adjacent to each other. The third switch unit and the amplifier are adjacent to each other. The amplifier and the second switch unit are adjacent to each other. The first, second and third switch units, and the amplifier are disposed on a straight line in an order in which a signal passes through the first switch unit, the second switch unit, the third switch unit, and the amplifier.

A variable gain circuit includes: input/output terminals P1 and P2 configured to input/output a high frequency signal; a transistor having a signal terminal “a” connected to the input/output terminal P1, a signal terminal “b” connected to the input/output terminal P2, and a control terminal; bias terminals B1, B2 and B3, and a reference voltage terminal respectively set to a first variable voltage, a second variable voltage, a third variable voltage, and a fixed voltage that are independent of one another; an impedance element connected between the bias terminal B1 and the signal terminal a; an impedance element connected between the bias terminal B2 and the signal terminal b; an impedance element connected between the bias terminal B3 and the control terminal; and a first switch configured to switch between connecting and not connecting the reference voltage terminal and the control terminal.

An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

An amplifier includes an amplifier circuit configured to include a transistor that amplifies a signal, an insulating film provided over the amplifier circuit, an input pad provided over the insulating film and coupled to the transistor through a wiring in the insulating film, an output pad provided over the insulating film and coupled to the transistor through the wiring in the insulating film, and a metal layer provided over the insulating film to be grounded, and configured to include an opening that extends in a second direction intersecting with a first direction in a plane direction, the signal propagating from the input pad to the output pad in the first direction, and the opening being at a position overlapping the transistor.

Power amplifier (PA) devices and methods for fabricating PA devices containing inverted power transistor dies are disclosed. In embodiments, the PA device includes a first set of input and output leads, an inverted first power transistor (e.g., peaking) die electrically coupled between the first set of input and output leads, and a base flange. The inverted first power die includes, in turn, a die body having a die frontside and a die backside opposite the die frontside. A power transistor having a first contact region is formed in the die frontside. A frontside layer system is formed over the die frontside and the power transistor, while an electrically-conductive bond layer attaches the inverted first power transistor die to the base flange. The first contact region of the power transistor is electrically coupled to the base flange through the electrically-conductive bond layer and through the frontside layer system.