H03F3/14

Semiconductor device and amplifier circuit
10727179 · 2020-07-28 · ·

In order to easily sort failures due to short circuit between wires in an inductor, a semiconductor device includes a plurality of inductors (first inductor, second inductor) formed in a plurality of wiring layers. In each of the wiring layers, the metal layer of the first inductor and the metal layer of the second inductor respectively extend around the peripheral region from the inner periphery to the outer periphery in the same direction. The metal layer of the first inductor and the metal layer of the second inductor are arranged so as to be adjacent to each other.

Amplifiers and amplifier modules with ground plane height variation structures

An embodiment of a module (e.g., an amplifier module) includes a substrate, a transmission line, and a ground plane height variation structure. The substrate is formed from a plurality of dielectric material layers, and has a mounting surface and a second surface opposite the mounting surface. A plurality of non-overlapping zones is defined at the mounting surface. The transmission line is coupled to the substrate and is located within a first zone of the plurality of non-overlapping zones. The ground plane height variation structure extends from the second surface into the substrate within the first zone. The ground plane height variation structure underlies the transmission line, a portion of the substrate is present between the upper boundary and the transmission line, and the ground plane height variation structure includes a conductive path between an upper boundary of the ground plane height variation structure and the second surface.

Power amplifier module
11881822 · 2024-01-23 · ·

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

Power amplifier module
11881822 · 2024-01-23 · ·

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

APPARATUSES AND METHODS FOR CONCENTRATED ARRANGEMENT OF AMPLIFIERS
20190378559 · 2019-12-12 · ·

Apparatuses and methods for concentrated arrangement of amplifiers. An example apparatus may include a first amplifier circuit including a first and second transistors. The first width different from the second width, the first length different from the second length. The apparatus further including a second amplifier circuit including a third and fourth transistors. The first transistor including a first gate electrode and the third transistor having a third gate electrode each having a first length and a first diffusion region and a third diffusion region, respectively, each having a first width, and the second transistor including a second gate electrode and the fourth transistor having a fourth gate electrode each with a fourth length and a second diffusion region and a fourth diffusion region, respectively, each having a second width. The first and third transistors are collectively arranged and the second and fourth transistors are collectively arranged.

APPARATUSES AND METHODS FOR CONCENTRATED ARRANGEMENT OF AMPLIFIERS
20190378559 · 2019-12-12 · ·

Apparatuses and methods for concentrated arrangement of amplifiers. An example apparatus may include a first amplifier circuit including a first and second transistors. The first width different from the second width, the first length different from the second length. The apparatus further including a second amplifier circuit including a third and fourth transistors. The first transistor including a first gate electrode and the third transistor having a third gate electrode each having a first length and a first diffusion region and a third diffusion region, respectively, each having a first width, and the second transistor including a second gate electrode and the fourth transistor having a fourth gate electrode each with a fourth length and a second diffusion region and a fourth diffusion region, respectively, each having a second width. The first and third transistors are collectively arranged and the second and fourth transistors are collectively arranged.

Power amplification module, front-end circuit, and communication device

A PA module includes a previous stage amplification element to amplify a high-frequency signal, a posterior stage amplification element to amplify the high-frequency signal amplified by the previous stage amplification element, and a variable filter circuit arranged between the previous stage amplification element and the posterior stage amplification element and to vary a pass band and an attenuation band in accordance with a frequency band of the high-frequency signal, in which the variable filter circuit includes a filter portion and switches, the previous stage amplification element, the switches, and the posterior stage amplification element are arranged on a mounting surface of a substrate, the filter portion is stacked and arranged so as to overlap with at least one of the previous stage amplification element, the switches, and the posterior stage amplification element when the substrate is viewed in a plan view.

Apparatuses and methods for concentrated arrangement of transistors of multiple amplifier circuits
10424368 · 2019-09-24 · ·

Apparatuses and methods for concentrated arrangement of amplifiers. An example apparatus may include a first amplifier circuit including a first and second transistors. The first width different from the second width, the first length different from the second length. The apparatus further including a second amplifier circuit including a third and fourth transistors. The first transistor including a first gate electrode and the third transistor having a third gate electrode each having a first length and a first, diffusion region and a third diffusion region, respectively, each having a first width, and the second transistor including a second gate electrode and the fourth transistor having a fourth gate electrode each with a fourth length and a second diffusion region and a fourth diffusion region, respectively, each having a second width. The first and third transistors are collectively arranged and the second and fourth transistors are collectively arranged.

Apparatuses and methods for concentrated arrangement of transistors of multiple amplifier circuits
10424368 · 2019-09-24 · ·

Apparatuses and methods for concentrated arrangement of amplifiers. An example apparatus may include a first amplifier circuit including a first and second transistors. The first width different from the second width, the first length different from the second length. The apparatus further including a second amplifier circuit including a third and fourth transistors. The first transistor including a first gate electrode and the third transistor having a third gate electrode each having a first length and a first, diffusion region and a third diffusion region, respectively, each having a first width, and the second transistor including a second gate electrode and the fourth transistor having a fourth gate electrode each with a fourth length and a second diffusion region and a fourth diffusion region, respectively, each having a second width. The first and third transistors are collectively arranged and the second and fourth transistors are collectively arranged.

POWER AMPLIFIER MODULE
20190273476 · 2019-09-05 ·

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.