An amplifier circuit includes a main amplifier and an auxiliary circuit that improves a slew rate of the main amplifier. The main amplifier is composed of a one-stage CMOS amplifier, amplifies a voltage difference between two input signals, and outputs, from output terminals, an output signal corresponding to the voltage difference of the input signals. The auxiliary circuit controls an auxiliary bias current flowing through the output terminals according to the voltage difference of the input signals, and interrupts the auxiliary bias current at a predetermined timing before completion of settling. Such a scheme enables improvement of a slew rate by the auxiliary circuit and high-speed operation as well as reduction of error due to mismatch between the main amplifier and the auxiliary circuit, thereby yielding high-accuracy output signal output therefrom.

An amplifier circuit includes a main amplifier and an auxiliary circuit that improves a slew rate of the main amplifier. The main amplifier is composed of a one-stage CMOS amplifier, amplifies a voltage difference between two input signals, and outputs, from output terminals, an output signal corresponding to the voltage difference of the input signals. The auxiliary circuit controls an auxiliary bias current flowing through the output terminals according to the voltage difference of the input signals, and interrupts the auxiliary bias current at a predetermined timing before completion of settling. Such a scheme enables improvement of a slew rate by the auxiliary circuit and high-speed operation as well as reduction of error due to mismatch between the main amplifier and the auxiliary circuit, thereby yielding high-accuracy output signal output therefrom.

Disclosed is an integrated circuit amplifier for use in a crystal oscillator. The circuit amplifier comprises a transistor; a voltage dependent capacitance circuit; and a node. The voltage dependent capacitance circuit comprises a device with a voltage dependent capacitance and a bias circuit. The node is connected to a terminal of the transistor and the integrated circuit amplifier is configured such that an intrinsic capacitance of the transistor is dependent on the mean voltage at the node. The node is connected to a terminal of the voltage dependent capacitance circuit and the integrated circuit amplifier is configured such that an effective capacitance of the node is dependent on the intrinsic capacitance of the transistor and the voltage dependent capacitance of said device. When in use, the voltage dependent capacitance circuit reduces the amount of change of the effective capacitance of the node when the mean voltage at the node changes.

Disclosed is an integrated circuit amplifier for use in a crystal oscillator. The circuit amplifier comprises a transistor; a voltage dependent capacitance circuit; and a node. The voltage dependent capacitance circuit comprises a device with a voltage dependent capacitance and a bias circuit. The node is connected to a terminal of the transistor and the integrated circuit amplifier is configured such that an intrinsic capacitance of the transistor is dependent on the mean voltage at the node. The node is connected to a terminal of the voltage dependent capacitance circuit and the integrated circuit amplifier is configured such that an effective capacitance of the node is dependent on the intrinsic capacitance of the transistor and the voltage dependent capacitance of said device. When in use, the voltage dependent capacitance circuit reduces the amount of change of the effective capacitance of the node when the mean voltage at the node changes.

According to one embodiment, in a first differential amplifier circuit of a semiconductor device, a first transistor receives an input signal at the gate. A second transistor forms a differential pair with the first transistor. The second transistor receives a reference signal at the gate. A third transistor is connected in series with the first transistor. A fourth transistor is connected in series with the second transistor. A fifth transistor is disposed on the output side. The fifth transistor forms a first current mirror circuit with the fourth transistor. A sixth transistor is connected to the drain of the second transistor in parallel with the fourth transistor. The sixth transistor forms a second current mirror circuit with the fifth transistor. A first discharge circuit is connected to the source of the sixth transistor.

According to one embodiment, in a first differential amplifier circuit of a semiconductor device, a first transistor receives an input signal at the gate. A second transistor forms a differential pair with the first transistor. The second transistor receives a reference signal at the gate. A third transistor is connected in series with the first transistor. A fourth transistor is connected in series with the second transistor. A fifth transistor is disposed on the output side. The fifth transistor forms a first current mirror circuit with the fourth transistor. A sixth transistor is connected to the drain of the second transistor in parallel with the fourth transistor. The sixth transistor forms a second current mirror circuit with the fifth transistor. A first discharge circuit is connected to the source of the sixth transistor.

An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

A semiconductor device includes: a first gate line and a second gate line extending along a first direction, a third gate extending along a second direction and between the first gate line and the second gate line, and a drain region adjacent to one side of the third gate line. Preferably, the third gate line includes a first protrusion overlapping the drain region.

A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.