An electrical balance duplexer has multiple impedance gradients and multiple impedance tuners. The electrical balance duplexer transmits an outgoing signal from a transmitter during a transmission mode when a first set of impedance gradients of the multiple impedance gradients is operating in a first impedance state and a first set of impedance tuners of the multiple impedance tuners is operating in a second state. The electrical balance duplexer isolates the outgoing signal from a receiver during the transmission mode when a second set of impedance gradients of the multiple impedance gradients and a second set of impedance tuners of the multiple impedance tuners are operating in the second impedance state.

A fast-switching power management circuit operable to prolong battery life is provided. The power management circuit includes a voltage circuit that can generate an output voltage for amplifying an analog signal in a number of time intervals and a pair of hybrid circuits each causing the output voltage to change in any of the time intervals. A control circuit is configured to activate any one of the hybrid circuits during a preceding one of the time intervals to cause the output voltage to change in an immediately succeeding one of the time intervals. By starting the output voltage change earlier in the preceding time interval, it is possible to complete the output voltage change within a switching window in the succeeding time interval while concurrently reducing rush current associated with the output voltage change, thus helping to prolong battery life in a device employing the power management circuit.

Broadband feedforward power amplifiers are disclosed herein. In certain embodiments, a broadband feedforward power amplifier includes a power amplifier electrically connected between a radio frequency (RF) input and an RF output, and a feedforward compensation circuit including a first amplifier electrically connected in parallel with the power amplifier, a load impedance, and a second amplifier electrically connected between the radio frequency input and the load impedance. The feedforward compensation circuit generates a compensation signal based on sensing an output of the first amplifier and an output of the second amplifier, and provides the compensation signal to the radio frequency output to thereby compensate the power amplifier for non-linearity.

An example electronic device includes an antenna; a switching regulator; a communication chip including an amplifier, a first linear regulator operably connected to the amplifier and the switching regulator and configured to be supplied with a first voltage from the switching regulator, and a second linear regulator operably connected to the amplifier and the switching regulator and configured to be supplied with a second voltage higher than the first voltage from the switching regulator, the communication chip configured to transmit a radio-frequency signal outside of the electronic device through the antenna; and a control circuit. The control circuit is configured to produce an envelope of an input signal input to the amplifier in connection with the radio-frequency signal and to provide the produced envelope to at least one of the first linear regulator or the second linear regulator. The first linear regulator is configured to provide a third voltage corresponding to the envelope to the amplifier using the first voltage based on the envelope having a voltage in a first range. The second linear regulator is configured to provide a fourth voltage higher than the third voltage to the amplifier using the second voltage based on the voltage of the envelope being in a second range including values larger than values included in the first range.

There is provided mechanisms for enabling linearization of a non-linear electronic device. A method is performed by a linearizer device. The method comprises receiving an input signal destined to be input to the non-linear electronic device. Input-output characteristics of the non-linear electronic device is in the linearizer device represented by a linearization function defined by a LUT based model of base functions. The linearizer device is configured to in a greedy pursuit framework select the base functions according to a signal reconstruction criterion. The method comprises obtaining an output signal by subjecting the input signal to the linearization function. The method comprises providing the output signal, instead of the input signal, as input to the non-linear electronic device, thereby enabling linearization of the non-linear electronic device.

A power amplification circuit including: a power splitter which splits an input signal into a first signal and a second signal; a first carrier amplifier which amplifies the first signal to output a first amplified signal; a first peak amplifier which amplifies the second signal when a power level of the second signal is larger than or equal to a predetermined power level to output a second amplified signal; and a combiner which combines the first amplified signal and the second amplified signal, in which the first carrier amplifier and the first peak amplifier are provided to a same semiconductor substrate.

A phase-synchronized RF power generator includes: an RF power amplifier for amplifying an RF power signal; a first directional coupler; an isolator for adjusting impedance mismatch generated by the first directional coupler, and transferring the RF power signal transferred by the first directional coupler to the output terminal; a second directional coupler for transferring part of the feedback signal transferred by the first directional coupler to be compared with a frequency of a reference signal provided by a crystal oscillator, and transferring rest of the feedback signal to a feedback loop; a digital phase shifter for adjusting a phase of the feedback signal transferred by the second directional coupler at predetermined intervals; an analog phase shifter for continuously adjusting the phase of the feedback signal discretely adjusted by the digital phase shifter; and a frequency comparator.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a III-V semiconductor substrate, a first RF signal input terminal, a first RF signal output terminal, and a transistor (e.g., a GaN FET). The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

Systems and apparatuses are disclosed that include a distributed power system configured to provide power to a number of loads. The system includes power converters configured to receive DC power from a common power source, each of the plurality of power converters configured to provide DC power to a corresponding load from. Each of the power converters is positioned proximal to the corresponding load that it powers.

In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.