A power amplifier using multi-path common-mode feedback loops for radio frequency linearization is disclosed. In one aspect, a complementary metal oxide semiconductor (CMOS) power amplifier containing cascoded n-type field effect transistors (NFETs) and cascoded p-type FETs (PFETs) may have a common-mode feedback network and provides bias voltages that are dynamically varying with the signal power to keep the output common-mode fixed around a half-supply level, while the small-signal and large-signal transconductances of the FET's are kept balanced. A further feedback network may be associated with the supply voltage to assist in providing a symmetrical supply signal. The symmetrical supply signal allows for supply variations without introducing distortion for the power amplifier stage.

A balun is disclosed and includes a dielectric substrate defining a first surface and a second surface. The balun includes a first output port including a first output ground portion and first output power portion; a second output port including a second output ground portion and a second output power portion; and an input port including an input ground portion and input power portion. The first output ground portion, the second output ground portion, and the input ground portion are coupled at a ground junction portion. The first output power portion, the second output power portion, and the input power portion are coupled at a power junction portion. The first output power portion, the second output power portion, and the input power portion are positioned on the first surface. The first output ground portion, the second output ground portion, and the input ground portion are positioned on the second surface.

Example embodiments relate to push-pull class E amplifiers. One example push-pull class E amplifier includes an input configured for receiving a signal to be amplified. The push-pull class E amplifier also includes an output configured for outputting the signal after amplification. Additionally, the push-pull class E amplifier includes a printed circuit board having a first dielectric layer and a second dielectric layer. Further, the push-pull class E amplifier includes a first amplifying unit and a second amplifying unit. Yet further, the push-pull class E amplifier includes a balun, a capacitive unit, a first line segment, a second line segment, a third line segment, and a fourth line segment. The first line segment and the second line segment are arranged on the first dielectric layer. A combined length of the third line segment and the fourth line segment corresponds to a quarter wavelength of an operational frequency of the amplifier.

A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N) of each of the stacked transistor units (112A, 112B, 112C).

An active load stage converts a first input current and a second input current into a first voltage and a second voltage. A driver amplifier operates upon receiving the first voltage and the second voltage from the active load stage, and outputs a current to an output terminal. The driver amplifier has a first transistor and a second transistor connected in series between a first reference potential terminal and a second reference potential terminal. The first transistor receives the first voltage at a gate and passes a first current, and the second transistor receives the second voltage at a gate and passes a second current. A minimum selector provides feedback to the first voltage and the second voltage such that an absolute value of each of the first current and the second current becomes more than or equal to a quiescent current of the driver amplifier.

An amplifier comprising a main branch amplifier and an auxiliary branch amplifier, wherein one branch is a constant current-biased branch, and another branch is a voltage biased branch, with the branches connected in cascode configuration to form a load modulated amplifier.

An amplifier for converting a single-ended input signal to a differential output signal. The amplifier comprises a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor, configured in common-source or common-emitter mode, receives the single-ended input signal and generates a first part of the differential output signal. The second transistor, also configured in common-source or common-emitter mode, generates a second part of the differential output signal. The third and fourth transistors are capacitively cross-coupled. The amplifier further comprises inductive degeneration such that a source or emitter of the first transistor is connected to a first inductor and a source or emitter of the second transistor is connected to a second inductor.

An amplifier includes a first stage and a second stage. The first stage includes a floating current source to maintain current within a threshold. The first stage also includes a local common mode feedback configured to provide gain to an input signal. Moreover, the second stage includes a driver that provides a load current to a load coupled to the amplifier.

Systems, methods and apparatus for practical realization of an integrated circuit comprising a stack of transistors operating as an RF amplifier are described. As stack height is increased, capacitance values of gate capacitors used to provide a desired distribution of an RF voltage at the output of the amplifier across the stack may decrease to values approaching parasitic/stray capacitance values present in the integrated circuit which may render the practical realization of the integrated circuit difficult. Coupling of an RF gate voltage at the gate of one transistor of the stack to a gate of a different transistor of the stack can allow for an increase in the capacitance value of the gate capacitor of the different transistor for obtaining an RF voltage at the gate of the different transistor according to the desired distribution.

Apparatus and methods for radio frequency (RF) amplification are disclosed. In certain embodiments, an RF amplifier includes an output node configured to output an RF output signal, a main amplifier stage including a differential output, a first differential balun combiner configured to provide a first single-ended RF signal to the output node based on combining a first differential RF signal from the differential output of the main amplifier stage, an auxiliary amplifier stage including a differential output, a transformer component, and a second differential balun combiner configured to generate a second single-ended RF signal based on combining a second differential RF signal from the differential output of the auxiliary amplifier stage. The second differential balun combiner provides the second single-ended RF signal to the output node through the transformer component.