Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.

The invention relates to a high-performance audio amplifier intended to control at least one loudspeaker, the amplifier comprising a pre-amplification stage that receives an input signal, a power amplification stage connected to the pre-amplification stage and a feedback that delivers to the pre-amplification stage an image of the output signal, the power amplification stage comprising two power supply circuits comprising a MOSFET transistor. The invention is characterized in that it comprises: a sub-circuit for assisting with charging, a sub-circuit for assisting with discharging said MOSFET transistor, and a voltage-shifting sub-circuit.

The invention relates to a high-performance audio amplifier intended to control at least one loudspeaker, the amplifier comprising a pre-amplification stage that receives an input signal, a power amplification stage connected to the pre-amplification stage and a feedback that delivers to the pre-amplification stage an image of the output signal, the power amplification stage comprising two power supply circuits comprising a MOSFET transistor. The invention is characterized in that it comprises: a sub-circuit for assisting with charging, a sub-circuit for assisting with discharging said MOSFET transistor, and a voltage-shifting sub-circuit.