A power amplifier arrangement comprises a power amplifier comprising at least one transistor having a first gate and a second gate. The first gate is configured to receive a radio frequency input signal superimposed with a first control signal, and the second gate is configured to receive a second control signal. The first control signal is a linearization signal varying in relation to an envelope of the input signal and the second control signal is a temperature compensation signal varying in relation to a temperature of the power amplifier, or vice versa.

An amplifier includes input transconductors that receive an input signal, the input signal having a voltage swing. A supply side current mirror generates a gate voltage as a function of input signal voltage and current sources that provide a bias current of the input transconductors as a function of the gate voltage to maintain a constant bias current across the voltage swing of the input signal. Resistors average source voltages of the transconductance-cancelling transconductors to provide an average source voltage and apply the average source voltage to wells of input devices of the transconductance-cancelling transconductors to reduce back bias effect. The input devices are laid out in a same well and have a common centroid to cancel out process mismatches. A first I-DAC trims an offset of first transconductors, and a second I-DAC trims an offset of second transconductors to attain low offsets across a rail-to-rail input common mode range.

Methods and apparatuses are provided wherein a sensor which comprises at least two electrodes and a movable part is alternately biased with at least two different voltages.

Systems and methods implementing a resonance circuit, including an avalanche photodiode, in which a resonance frequency of the resonance circuit is matched with the frequency of a dynamic biasing signal of the avalanche photodiode, can be used in a variety of applications. In various embodiments, a method for blocking and/or compensating current injection associated with the parasitic capacitance of APDs operated under dynamic biasing may be substantially realized by the matching of the resonance frequency of a resonance circuit including the avalanche photodiode with the frequency of an applied dynamic biasing signal. Additional systems and methods are described that can be used in a variety of applications.

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

A class AB amplifier with improved DC gain. An amplifier includes an input stage and an output stage. The output stage is configured to amplify an output of the input stage. The output stage includes output transistors, class AB amplifier circuitry, minimum selector circuitry, and gain boost amplifier circuitry. The class AB amplifier circuitry includes a first transistor and a second transistor connected as a differential amplifier. The minimum selector circuitry is configured to control bias current in the output transistors by driving a control input of the first transistor. The gain boost amplifier circuitry is coupled to the class AB amplifier circuitry. The gain boost amplifier circuitry is configured to drive a common mode signal onto the control input of the first transistor and a control input of the second transistor, the common mode signal based on the output of the input stage.

Techniques for supplying a bias current to a load are provided. In certain examples, a circuit can include a level-shift capacitance, a current source, and a load configured to receive a bias current in a first state of the circuit. The current source and the level-shift capacitance can be coupled in series between the load and a supply voltage in the first state. In some examples, during a second state of the circuit, the level-shift capacitance can receive charge, and can be isolated from one of the load or the current source.

An operational amplifier integrated circuit includes a differential pair of transistors having a first input, a second input. A bias current generator applies a bias current to an output of the differential pair of transistors. A control loop generates a control voltage arising from a difference in potentials between the first input and the second input. An additional current that is added to the bias current is generated in response to the control voltage.

Techniques for supplying a bias current to a load are provided. In certain examples, a circuit can include a level-shift capacitance, a current source, and a load configured to receive a bias current in a first state of the circuit. The current source and the level-shift capacitance can be coupled in series between the load and a supply voltage in the first state. In some examples, during a second state of the circuit, the level-shift capacitance can receive charge, and can be isolated from one of the load or the current source.

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.