Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA includes first and second differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may include: a first inductor with a first terminal capacitively-coupled to a gate terminal of the first differential pair transistor and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first differential pair transistor, the fourth inductor may be coupled to a source terminal of the second differential pair transistor, and the third inductor may be capacitively-coupled to a gate terminal of the second differential pair transistor and also to ground. The second inductor may be embedded within the first inductor.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA includes first and second differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may include: a first inductor with a first terminal capacitively-coupled to a gate terminal of the first differential pair transistor and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first differential pair transistor, the fourth inductor may be coupled to a source terminal of the second differential pair transistor, and the third inductor may be capacitively-coupled to a gate terminal of the second differential pair transistor and also to ground. The second inductor may be embedded within the first inductor.

Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA includes first and second differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may include: a first inductor with a first terminal capacitively-coupled to a gate terminal of the first differential pair transistor and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first differential pair transistor, the fourth inductor may be coupled to a source terminal of the second differential pair transistor, and the third inductor may be capacitively-coupled to a gate terminal of the second differential pair transistor and also to ground. The second inductor may be embedded within the first inductor.

The present invention relates to a reference voltage temperature coefficient calibration circuit. The circuit comprises: an operational amplifier comprising an input pair transistor, a load pair transistor, and a bias current source, an inverted input terminal of the operational amplifier being connected to an output terminal of the operational amplifier; and an adjustable current module connected in parallel to the load pair transistor, the adjustable current module being configured to generate an adjusting current, the adjusting current being used to adjust an offset current flowing through the input pair transistor, wherein the adjusting current is related to a current of the bias current source and an order of Kelvin temperature. The present invention is applicable to calibration of first-order to high-order temperature coefficients of a reference voltage in a circuit, and has universality.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA includes first and second differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may include: a first inductor with a first terminal capacitively-coupled to a gate terminal of the first differential pair transistor and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first differential pair transistor, the fourth inductor may be coupled to a source terminal of the second differential pair transistor, and the third inductor may be capacitively-coupled to a gate terminal of the second differential pair transistor and also to ground. The second inductor may be embedded within the first inductor.