The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency point 1 less than the design frequency point and frequency point 2 greater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.

A signal amplifier includes a first amplifier, a second amplifier, and an output. The first amplifier amplifies a first input signal to form a first amplified output signal. The first input signal has a common mode voltage in a first voltage range, and the first amplified output signal has a common mode voltage in a second voltage range different from the first voltage range. The second amplifier amplifies a second input signal to form a second amplified output signal. The first input signal has the common mode voltage in the second voltage range and the second amplified output signal has the common mode voltage in the second voltage range. The output outputs the first amplified output signal or the second amplified output signal as an amplified output signal.

A method and apparatus for correcting baseline wander is disclosed. The method and apparatus may include generating filtered signals by filtering input signals using a filter circuit. An equalizer circuit using the filtered signals may generate output signals. Feedback networks may be configured to couple a respective output signal to a corresponding filtered signal.

Apparatus and methods for power amplifiers isolated by differential ground are provided. In certain implementations, a mobile device includes a transceiver that generates a plurality of radio frequency input signals including a first radio frequency input signal and a second radio frequency input signal, and a plurality of differential power amplifiers including a first differential power amplifier that provides amplification to the first radio frequency input signal and a second differential power amplifier that provides amplification to the second radio frequency input signal. The first differential power amplifier and the second differential power amplifier each operate with differential ground so as to provide isolation between the first differential power amplifier and the second differential power amplifier.

An amplification circuit for RF power amplifiers is provided. The circuit includes two PMOS amplification modules and two NMOS amplification modules; each module includes a CSCG structure composed of a stack of K transistors. The first PMOS module and the first NMOS module are connected in series between a supply voltage and ground; gates of main amplification transistors of the first PMOS module and the first NMOS module are connected to a non-inverting input, and outputs of the first PMOS module and the first NMOS module are connected together to form an inverting output. The second PMOS module and the second NMOS module are similarly connected. Both the first and the second modules will be connected side-by-side as a pseudo differential structure to provide double push-pull function to the load. The present disclosure simultaneously achieves high power efficiency, and high linearity.

A signal amplifier includes a first amplifier, a second amplifier, and an output. The first amplifier amplifies a first input signal to form a first amplified output signal. The first input signal has a common mode voltage in a first voltage range, and the first amplified output signal has a common mode voltage in a second voltage range different from the first voltage range. The second amplifier amplifies a second input signal to form a second amplified output signal. The first input signal has the common mode voltage in the second voltage range and the second amplified output signal has the common mode voltage in the second voltage range. The output outputs the first amplified output signal or the second amplified output signal as an amplified output signal.

Apparatus and methods for power amplifier systems with differential ground are provided. In certain implementations, a semiconductor die for a radio frequency communication system includes a differential ground network configured to distribute a ground voltage. The differential ground network is substantially symmetric with respect to a line of symmetry. The semiconductor die further includes a first differential power amplifier including a first half circuit and a second half circuit that operate differentially to provide amplification. The first half circuit and the second half circuit are symmetrically connected to the differential ground network. The semiconductor die can further include a second differential power amplifier, and the differential ground network serves to provide isolation between the first differential power amplifier and the second differential power amplifier.

Methods and apparatuses for controlling impedance in intermediate nodes of a stacked FET amplifier are presented. According to one aspect, a series-connected resistive and capacitive network coupled to a gate of a cascode FET transistor of the amplifier provide control of a real part and an imaginary part of an impedance looking into a source of the transistor. According to another aspect, a second parallel-connected resistive and inductive network coupled to the first network provide further control of the real and imaginary parts of the impedance. According to another aspect, a combination of the first and/or the second networks provide control of the impedance to cancel a reactance component of the impedance. According to another aspect, such combination provides control of the real part for distribution of an RF voltage output by the amplifier across stacked FET transistors of the amplifier.

Apparatus and methods for power amplifier systems with differential ground are provided. In certain implementations, a semiconductor die for a radio frequency communication system includes a differential ground network configured to distribute a ground voltage. The differential ground network is substantially symmetric with respect to a line of symmetry. The semiconductor die further includes a first differential power amplifier including a first half circuit and a second half circuit that operate differentially to provide amplification. The first half circuit and the second half circuit are symmetrically connected to the differential ground network. The semiconductor die can further include a second differential power amplifier, and the differential ground network serves to provide isolation between the first differential power amplifier and the second differential power amplifier.

A wideband highly-linear buffer circuit exhibiting a low output impedance comprises a first PFET (PFET1), a second PFET (PFET2), a first NFET (NFET1), and a second NFET (NFET2). Sources of PFET1 and PFET2 are coupled to VDD. PFET1's drain is coupled to an output lead. PFET2 acts as a current source. NFET1's drain is coupled to PFET2's drain and to PFET1's gate. NFET1's source is coupled to the output lead. NFET2's source is coupled to ground. NFET2's drain is coupled to NFET1's source and to the output lead. NFET1's gate is AC coupled to a first input lead. In a single-ended input example, NFET2's gate is AC coupled NFET1's drain. In a differential input example, NFET2's gate is AC coupled to a second input lead. In another differential input example, PFET2 is not just a current source, but rather PFET2's gate is AC coupled to the first input lead.