The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.

Circuits for low noise amplifiers with interferer reflecting loops are provided. In some embodiments, circuits for a low noise amplifier with an interferer reflecting loop are provided, the circuits comprising: a low noise amplifier (LNA) having an input and an output; a buffer having an input coupled to the output of the LNA and an output; and notch filter having an input coupled to the output of the buffer and an output coupled to the input of the LNA.

A travelling wave amplifier (TWA) with a widened frequency bandwidth is disclosed. The TWA include input transmission lines, amplifier units connected in parallel between the input terminal and the out terminal of the TWA. Each of the amplifier units configures an emitter follower in the front end thereof and an amplifying section. A feature of the TWA is that compensation units that compensates the high frequency performance of the TWA are implemented in the input transmission lines and/or integrated with the amplifier units.