The detection device comprises a photodetector configured to transform an electromagnetic signal into a representative electric signal. The detection device also comprises an amplifier having a first input terminal connected to a first terminal of the photodetector. An integration capacitor is connected to the output terminal of the amplifier and to the first input terminal of the amplifier. A first source of a reference voltage is connected to a second input terminal of the amplifier. A second source of a detector voltage is connected to a second input terminal of the photodetector. The first and second voltage sources are correlated so as to correlate the noise components.

An RF transmitter with a power combiner and a differential amplifier is provided. The power combiner converts a differential output signal to a single-end output signal and transmits the single-end output signal to the antenna. The differential amplifier includes common-source input transistors, common-gate output transistors and a switch module. The common-source input transistors amplify a differential input signal and output an amplified differential signal. The common-gate output transistors, including sources electrically coupled to the common-source input transistors and drains electrically coupled to the power combiner, generate the differential output signal according to the amplified differential signal. The switch module is electrically coupled between the gates. The switch module electrically couples the gates of the common-gate output transistors if the RF transmitter is in operation and electrically isolates the gates if the RF receiver is in operation.

An RF transmitter with a power combiner and a differential amplifier is provided. The power combiner converts a differential output signal to a single-end output signal and transmits the single-end output signal to the antenna. The differential amplifier includes common-source input transistors, common-gate output transistors and a switch module. The common-source input transistors amplify a differential input signal and output an amplified differential signal. The common-gate output transistors, including sources electrically coupled to the common-source input transistors and drains electrically coupled to the power combiner, generate the differential output signal according to the amplified differential signal. The switch module is electrically coupled between the gates. The switch module electrically couples the gates of the common-gate output transistors if the RF transmitter is in operation and electrically isolates the gates if the RF receiver is in operation.

A semiconductor device includes an operational transconductance amplifier (OTA) with a matched pair of transistors including a first transistor and a second transistor, and configuration units that include a first set of switches, a second set of switches, and an input transistor. Gain adjustment circuitry is coupled to adjust gain of the OTA. Measurement circuitry is coupled to measure offset in the OTA. Control logic is configured to operate the first and second sets of switches to couple input transistors of a first group of the configuration units to the first transistor of the matched pair of transistors, and to couple input transistors of a remaining group of the configuration units to the second transistor of the matched pair of transistors. Settings of the first and second sets of switches are selected to minimize the offset.

A first correction voltage generation circuit provides a first positive or negative correction voltage for correcting an input voltage. A second correction voltage generation circuit provides a second correction voltage identical in polarity to the first correction voltage in accordance with the first correction voltage. The second correction voltage is generated to have a temperature coefficient reverse in polarity to a temperature coefficient of the first correction voltage.

The present disclosure provides circuit and method embodiments for calibrating a signal of an integrated circuit. A programmable resistive element is coupled in series with a node of the integrated circuit, where at least part of the integrated circuit is formed in at least one front end of line (FEOL) device level. The programmable resistive element is formed in at least one back end of line (BEOL) wiring level, and the programmable resistive element is in a non-volatile resistive state that is variable across a plurality of non-volatile resistive states in response to a program signal applied to the programmable resistive element.

A semiconductor device includes an operational transconductance amplifier (OTA) with a matched pair of transistors including a first transistor and a second transistor, and configuration units that include a first set of switches, a second set of switches, and an input transistor. Gain adjustment circuitry is coupled to adjust gain of the OTA. Measurement circuitry is coupled to measure offset in the OTA. Control logic is configured to operate the first and second sets of switches to couple input transistors of a first group of the configuration units to the first transistor of the matched pair of transistors, and to couple input transistors of a remaining group of the configuration units to the second transistor of the matched pair of transistors. Settings of the first and second sets of switches are selected to minimize the offset.

The disclosure provides an amplifier. The amplifier includes a first transistor that receives a first input and generates a first load current. A first output node is coupled to a power supply through a first load resistor. The first load resistor receives the first load current. A first capacitor network is coupled to the first output node and draws a first capacitive current from the first output node. A first current buffer is coupled between the first output node and the first transistor. A current through the first current buffer is a summation of the first load current and the first capacitive current.

A first amplifier circuit includes differential pair transistors that amplify a difference between input voltages and active load transistors connected to the differential pair transistors. A second amplifier circuit amplifies output voltage of the first amplifier circuit. An offset correction current source is connected in parallel with the active load transistors and adjusts electric current flowing through the differential pair transistors correct offset voltage. An offset correction switch switches a driving state of the offset correction current source. A transconductance proportional current generation circuit generates transconductance proportional current for compensating for temperature drift of offset correction voltage for correcting the offset voltage. The transconductance proportional current is proportional to transconductance.

Aspects of the disclosure provide an amplifier system and a method for dynamically cancelling an offset voltage. The amplifier system includes a chopper amplifier system that includes a differential amplifier with an offset calibration circuit. The chopper amplifier system is configured to generate an output signal including voltage variations indicating an offset voltage of the differential amplifier. The amplifier system also includes a feedback circuit configured to determine a polarity of the offset voltage of the differential amplifier based on the output signal, and to transmit a control signal to the offset calibration circuit to reduce the offset voltage of the differential amplifier.