An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal. The wherein the asymmetrical parallel-combining transformer may include (a) a HP primary winding that is constructed and arranged to receive the HP amplified signal; (b) LP primary windings that are constructed and arranged to receive the LP amplified signal; and (c) secondary windings that are magnetically coupled to the HP primary winding and to the LP primary windings, and are constructed and arranged to output a output signal.

The disclosed technology includes device, systems, techniques, and methods for amplifying a complex modulated signal with a mixed-signal power amplifier. A mixed-signal power amplifier may include an input network for splitting an input signal to multiple signals with corresponding phase and amplitude offsets, a main power amplification path including at least an analog power amplifier for amplifying a first signal, one or more auxiliary power amplification paths including at least one digitally controlled analog power amplifier in each path for amplifying a second signal, and an output network for combining the two amplified signals. The main power amplification path and the auxiliary power amplification paths can operate together to achieve load modulation to enhance the overall power amplifier efficiency at power back-off mode and the overall power amplifier linearity. The disclosed technology further includes transmission systems incorporating the mixed-signal power amplifier.

An electronic device may include wireless circuitry having one or more radio-frequency amplifiers coupled to differential coupled lines. The differential coupled lines may provide routing and impedance matching for the radio-frequency amplifiers with minimal power loss. The differential coupled lines may include a first pair of coupled lines and a second pair of coupled lines. The first pair of coupled lines may include a first conductive routing path coupled to a first voltage line and a second conductive routing path routed along the first conductive routing path and coupled to a second voltage line. The second pair of coupled lines may include a third conductive routing path coupled to the first voltage line and a fourth conductive routing path routed along the third conductive routing path and coupled to the second voltage line.

An impedance matching apparatus for providing impedance matching for an RF component. The apparatus includes a balun transformer circuit having a primary coil at an input side of the balun transformer circuit. The primary coil can be connected to a signal source to receive an input signal from the signal source. The balun transformer circuit further includes a secondary coil at an output side of the balun transformer circuit, the secondary coil being coupled to the primary coil to supply an output signal to the RF component and having a parasitic leakage inductance configured to match the output impedance of the signal source to the input impedance of the RF component

The present disclosure provides an inductive magnetic sensor, which includes a signal pre-amplifying measurement circuit, a feedback loop, a magnetic core and coil group, a low-noise autozero processing circuit, and an output protection module. The magnetic core and coil group is electrically connected between the signal pre-amplifying measurement circuit and the feedback loop, the signal pre-amplifying measurement circuit comprises the low-noise autozero processing circuit, and the feedback loop and the low-noise autozero processing circuit are electrically connected to the output protection module respectively. By introducing the resonant notch filter, it may extend the passband to the low frequency, and extend the low-frequency characteristic of the magnetic sensor, to obtain a better low-frequency magnetic sensor. The present disclosure further provides an electromagnetic prospecting equipment.

A testing system includes: a dividing circuit configured to receive a testing signal and provide a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit, each of the plurality of power-amplifier chips being configured to be tested by receiving a respective input signal of the plurality of input signals and generating a respective output signal for a predetermined testing time.

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.