Improvement in heat dissipation capability is intended. A radio-frequency module includes a mounting substrate, a plurality of transmission filters, a resin layer, and a shield layer. The mounting substrate has a first major surface and a second major surface opposite to each other. The plurality of transmission filters is mounted on the first major surface of the mounting substrate. The resin layer is disposed on the first major surface of the mounting substrate and covers at least part of an outer peripheral surface of each of the plurality of transmission filters. The shield layer covers the resin layer and at least part of each of the plurality of transmission filters. At least part of a major surface of each of the plurality of transmission filters on an opposite side to the mounting substrate side is in contact with the shield layer.

In some embodiments, a power amplification system can comprise a current source, an input switch configured to alternatively feed current from the current source to a high-power circuit path and a low-power circuit path, and a band switch including a switch arm for switching between a plurality of bands. Each of the high-power circuit path and the low-power circuit path can be connected to the switch arm.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

A radio frequency module has a substrate, a first chip inductor, an integrated circuit, and a first amplifier connected to the first chip inductor. The first chip inductor is on a first main surface of the substrate and the integrated circuit is on a second main surface of the substrate, the second main surface being opposite the first main surface. The integrated circuit includes the first amplifier. When the substrate is viewed from a direction perpendicular to the first main surface of the substrate, the first chip inductor at least partially overlaps the integrated circuit.

A tunable passband filter including a signal input port for receiving an input radio frequency (RF) signal, a signal output port for transmitting a filtered output RF signal, a first high-pass section having a first tunable microelectromechanical system (MEMS) switch array to receive the input RF signal from the signal input port, a second high-pass section having a second tunable MEMS switch array to transmit the output RF signal to the signal output port, and a low pass section operatively coupled between the first high-pass section and the second high-pass section, and having each of a first tunable MEMS bridge array, a second tunable MEMS bridge array, and a high impedance line. The tunable passband filter is configured to filter the input RF signal to yield the filtered output RF signal.

Doherty power amplifier combiner with tunable impedance termination circuit. A signal combiner can include a balun transformer circuit having a first coil and a second coil. The first coil can be implemented between a first port and a second port. The second coil can be implemented between a third port and a fourth port. The first port and the third port can be coupled by a first capacitor. The second port and fourth port can be coupled by a second capacitor. The first port can be configured to receive a first signal. The fourth port can be configured to receive a second signal. The second port can be configured to yield a combination of the first signal and the second signal. The signal combiner can include a termination circuit that couples the third port to a ground. The termination circuit can include a tunable impedance circuit.

RF circuitry, which includes a first passive voltage-gain network and a first MOS-based RF receive amplifier, is disclosed. The first passive voltage-gain network provides a first passive RF receive signal using a first RF receive signal, such that an energy of the first passive RF receive signal is obtained entirely from the first RF receive signal by the first passive voltage-gain network. A voltage of the first passive RF receive signal is greater than a voltage of the first RF receive signal. The first MOS-based RF receive amplifier receives and amplifies the first passive RF receive signal to provide a first amplified RF receive signal.

An amplifier device for high frequency signals, in particular a linear high frequency amplifier device, which comprises at least one input, an incoming line, a pre-distortion unit, in particular an adaptive pre-distortion unit, an amplifier unit, in particular a non-linear power amplifier unit, a transmission line, a feedback unit, and an output. The output is connected to the amplifier unit via the transmission line. In addition, the at least one input is connected to the pre-distortion unit such that two incoming branch lines are provided which are interconnected by a switching unit. A first incoming branch line of the incoming branch lines comprises a down-converter being arranged between the at least one input and the pre-distortion unit.

An amplification circuit includes a first switching circuit that includes input terminals and first and second output terminals and that puts the second output terminal into an open state with respect to the input terminals while selectively putting the first output terminal into a state of being connected to any of the input terminals or selectively puts the second output terminal into a state of being connected to any of input terminals while putting the first output terminal into a state of being open with respect to the input terminals; a matching network that is connected to the first output terminal; an amplifier that is connected to an output side of the matching network; a second switching circuit that is connected to an output side of the amplifier; and a bypass path that electrically connects the second output terminal and an output terminal of the second switching circuit. The amplifier is a variable-gain amplifier.

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.