A wireless device or wireless communications system comprises a transceiver module, a processor, an energy-supplying device, and a radiating system comprising a non-resonant element, a ground plane element, and a wireless matching core (WMC). The wireless device may further comprise an intelligent database or look-up table and at least one sensor. The database contains information about the environment where the device is going to work and/or about the material of the objects where the device can be mounted and/or form factors of the device, and it is used for configuring the operation mode of the device. The ground plane element may be a ground plane layer printed on a printed circuit board. The WMC can be a universal matching network, a self-adaptive matching network, or a self-adaptive universal matching network. The non-resonant element can be a radiation booster.

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

In accordance with an embodiment, a semiconductor component, includes a common mode filter monolithically integrated with a protection device. The common mode filter includes a plurality of coils and the protection device has a terminal coupled to a first coil and another terminal coupled to a second coil.

A semiconductor device comprises a guarded circuit. The semiconductor device also comprises a guard ring surrounding the guarded circuit. The semiconductor device further comprises a resonant circuit coupled with the guard ring. The resonant circuit comprises an input node coupled with the guard ring. The resonant circuit also comprises an inductor. The resonant circuit further comprises a capacitor coupled with the inductor. The resonant circuit additionally comprises a ground node configured to carry a ground voltage. The inductor and the capacitor are coupled between the input node and the ground node.

Apparatus and methods for high voltage variable capacitors are provided herein. In certain configurations, an integrated circuit (IC) includes a variable capacitor array and a bias voltage generation circuit that biases the variable capacitor array to control the array's capacitance. The variable capacitor array includes a plurality of variable capacitor cells electrically connected in parallel between a radio frequency (RF) input and an RF output of the IC. Additionally, each of the variable capacitor cells can include a cascade of two or more pairs of anti-series metal oxide semiconductor (MOS) capacitors between the RF input and the RF output. The pairs of anti-series MOS capacitors include a first MOS capacitor and a second MOS capacitor electrically connected in anti-series. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the variable capacitor cells.

Disclosed are devices and methods related to autotransformer-based impedance matching for radio-frequency (RF) applications. In some embodiments, an impedance matching device can include a primary metal trace and a secondary metal trace, each having a respective number of turns. Such metal traces can be interconnected to form an autotransformer with the primary metal trace and the secondary metal trace being in respective planes separated by a selected distance. Such an autotransformer can be utilized to, for example, facilitate impedance matching of an amplified RF signal from a power amplifier (PA). In some embodiments, the impedance matching device can be implemented as an integrated passive device (IPD) mountable on a packaging substrate. Such an IPD can be configured to allow stacking of another component on the IPD to yield a number of desirable features in products such as RF modules.

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

Apparatus and methods for high voltage variable capacitors are provided herein. In certain configurations, an integrated circuit (IC) includes a variable capacitor array and a bias voltage generation circuit that biases the variable capacitor array to control the array's capacitance. The variable capacitor array includes a plurality of variable capacitor cells electrically connected in parallel between a radio frequency (RF) input and an RF output of the IC. Additionally, each of the variable capacitor cells can include a cascade of two or more pairs of anti-series metal oxide semiconductor (MOS) capacitors between the RF input and the RF output. The pairs of anti-series MOS capacitors include a first MOS capacitor and a second MOS capacitor electrically connected in anti-series. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the variable capacitor cells.

An Integrated Circuit (IC) containing at least one printed transformer-based matching network, which comprises: a) at least one printed transformer-based matching network with reduced size, which comprises a printed transformer with multiple internal ports in the form of electromagnetic discontinuities, introduced along the transverse dimension of the printed transformer; reactive elements, added to of the internal ports to thereby increase the order of the transformer-based matching network, the one or more reactive elements are printed along the transverse dimension of the matching network; a printed component connected to the input port of the matching network; a printed component connected to the output port of the matching network.

A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.