H03H3/0072

Resonator electrode shields

A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

Clock glitch mitigation apparatus and method

An apparatus and method to protect unauthorized change to a reference clock for a processor. The apparatus comprises: a first oscillator to generate a first clock; a second oscillator to generate a second clock; a third oscillator to generate a third clock; a first counter to count frequency of the first clock with respect to a fourth clock; a second counter to count frequency of the second clock with respect to the fourth clock; a third counter to count frequency of the third clock with respect to the fourth clock; and a circuitry to compare frequencies of the first, second, and third clocks with one another. The oscillators can be embedded in an interposer or package. These oscillators include one or more of: LC oscillator, micro electro-mechanical system (MEMs) based resonator, or ring oscillator.

Electromechanical resonators based on metal-chalcogenide nanotubes

This invention provides electromechanical resonators based on metal chalcogenide nanotubes. The invention further provides methods of fabrication of electromechanical resonators and methods of use of such electromechanical resonators.

Intraluminal ultrasound imaging device comprising a substrate separated into a plurality of spaced-apart segments, intraluminal ultrasound imaging device comprising a trench, and method of manufacturing

An intraluminal ultrasound imaging device includes a flexible elongate member configured to be positioned within a body lumen of a patient. The flexible elongate member includes a proximal portion and a distal portion. The device also includes an ultrasound imaging assembly disposed at the distal portion of the flexible elongate member. The ultrasound imaging assembly is configured to obtain imaging data of the body lumen. The ultrasound imaging assembly includes a transducer array including a substrate, a silicon oxide layer disposed over the substrate, and a plurality of rows of micromachined ultrasound transducer elements disposed on the silicon oxide layer. Two of the plurality of rows of micromachined ultrasound transducer elements are spaced apart by a trench formed by etching through a screen formed in the silicon oxide layer. Associated devices, systems, and methods are also provided.

Method for manufacturing a micromechanical layer structure
11405010 · 2022-08-02 · ·

A method for manufacturing a micromechanical layer structure, including: providing a first protective layer patterned to have at least one opening which is filled with sacrificial layer material; depositing a functional-layer layer structure; producing a first opening in the functional-layer layer structure to at least one opening of the first protective layer, so that in at least one of the layers of the functional-layer layer structure; depositing a second protective layer so that the first opening is filled with material of the second protective layer; patterning the second protective layer and the filled first opening to have a second opening to the first protective layer, the second opening having the same or a lesser width than the first opening; removing sacrificial layer material at least in the opening of the first protective layer; and removing protective layer material at least in the second opening.

Hafnium-zirconium oxide (HZO) ferroelectric transducer and method of making the same

A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.

Electromechanically damped resonator devices and methods

Micro-machined acoustic and ultrasonic transducer (MAUT), particularly piezoelectric MAUT (PMAUT), performance tradeoffs have meant reasonable pixel depth resolution necessitated low quality factor (Q) transducers with power distributed over a large bandwidth yielding modest imaging ranges whilst high-Q transducers providing higher acoustic power output for longer imaging ranges exhibit extended ringing limiting pixel depth information. Accordingly, the inventors have established MAUTs supporting high-Q transducers for long-range high-resolution imaging by integrating electromechanical actuators (dampers) which can be selectively engaged to mechanically damped the MAUT. In several applications PMAUT arrays are required where all transducer elements should have almost identical resonant frequencies. However, prior art fabrication processes have tended to produce PMAUTs with large inter-chip and inter-wafer variances. Prior art methodologies to reduce inter-wafer process variations do not address intra-wafer or inter-chip process variations and accordingly the inventors have established manufacturing methodologies and design solutions to address these for the PMAUT resonant frequency.

Resonator device

Certain aspects provide an integrated circuit (IC) including a resonator. One example IC generally includes a substrate, a first oxide region disposed above the substrate, and a resonator. The resonator may include a piezoelectric layer, a second oxide region disposed below the piezoelectric layer and bonded to the first oxide region, and a cavity in the second oxide region, wherein at least a portion of the second oxide region is below the cavity.

Component with a thin-layer covering and method for its production
11296673 · 2022-04-05 · ·

A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

THREE DIMENSIONAL MICROSTRUCTURES WITH SELECTIVELY REMOVED REGIONS FOR USE IN GYROSCOPES AND OTHER DEVICES
20220090917 · 2022-03-24 ·

Three-dimensional (3D) micro-scale shells are presented with openings of various sizes and geometries on the surface. The shell consist of a suspended ring-shaped resonator, multiple support beams, a support post, and a cap region that connects the support beams to the support post. Shells with openings of various sizes and geometries allow the creation of micro electromechanical systems (MEMS) sensors and actuators with a wide range of engineered mechanical and electrical properties. The openings on the shell surface can, for example, control the mechanical quality factor (Q) and resonance frequencies of the shell when the shell is used as a suspended proof mass of a mechanical resonator of a vibratory gyroscope. The shells can also serve as mechanical supporting layers and/or an electrode connection layer for MEMS actuators and sensors that use 3D shells as proof masses.