A half-bride combiner can be implemented as a coupling circuit having a common node and configured to couple the common node to one of first and second groups of filters through a first path and to couple the common node to the other group through a second path. The coupling circuit can be further configured such that the impedance provided by each filter of the one of the first and second groups for a signal in each band of the other group results in the signal being sufficiently excluded from the first path.

A half-bride combiner can be implemented as a coupling circuit having a common node and configured to couple the common node to one of first and second groups of filters through a first path and to couple the common node to the other group through a second path. The coupling circuit can be further configured such that the impedance provided by each filter of the one of the first and second groups for a signal in each band of the other group results in the signal being sufficiently excluded from the first path.

An integrated circuit (IC) resonator module for an IC package includes an acoustic resonator having a surface and a Bragg reflector adhered to the surface of the acoustic resonator. The Bragg reflector includes low impedance layers formed of a first material with a first acoustic impedance and a high impedance layer formed of a second material with a second acoustic impedance. The second acoustic impedance is greater than the first acoustic impedance. The Bragg reflector further includes a Bragg grating layer formed of randomly or periodically spaced patches of the second material separated by vias filled with the first material.

An integrated circuit (IC) resonator module for an IC package includes an acoustic resonator having a surface and a Bragg reflector adhered to the surface of the acoustic resonator. The Bragg reflector includes low impedance layers formed of a first material with a first acoustic impedance and a high impedance layer formed of a second material with a second acoustic impedance. The second acoustic impedance is greater than the first acoustic impedance. The Bragg reflector further includes a Bragg grating layer formed of randomly or periodically spaced patches of the second material separated by vias filled with the first material.

An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.

An electronic component comprises a substrate including a main surface on which a functional unit is formed and a cap layer defining a cavity enclosing and covering the functional unit. The cap layer is provided with holes communicating an inside of the cavity with an outside of the cavity. A resin layer covers the cap layer and the main surface and includes one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

An overcurrent protection circuit includes: a sampling sub-circuit configured to acquire gate input signals, select a gate input signal with a voltage value greater than a first preset voltage value as a sample gate input signal, generate a first control signal according to the sample gate input signal, and output the first control signal; a delay determination sub-circuit configured to receive the first control signal, delay the first control signal for a first preset time, determine whether a voltage value of the first control signal after delay is less than a voltage value of the first control signal before the delay, and if not, output a counting signal; and a counting control sub-circuit configured to receive the counting signal, perform counting according to the counting signal, and if a counted number reaches a preset number, output a second control signal.

An overcurrent protection circuit includes: a sampling sub-circuit configured to acquire gate input signals, select a gate input signal with a voltage value greater than a first preset voltage value as a sample gate input signal, generate a first control signal according to the sample gate input signal, and output the first control signal; a delay determination sub-circuit configured to receive the first control signal, delay the first control signal for a first preset time, determine whether a voltage value of the first control signal after delay is less than a voltage value of the first control signal before the delay, and if not, output a counting signal; and a counting control sub-circuit configured to receive the counting signal, perform counting according to the counting signal, and if a counted number reaches a preset number, output a second control signal.

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO.sub.3 or LiNbO.sub.3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. The aluminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surface of the piezoelectric single crystal substrate with an angle θ, and the aluminum film or the film has a [−1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO.sub.3 or LiNbO.sub.3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. The aluminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surface of the piezoelectric single crystal substrate with an angle θ, and the aluminum film or the film has a [−1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.