Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

The present invention discloses an amplifier. The bias amplifier includes a signal input end, for inputting an input signal; a voltage input end, for inputting a source voltage; an amplifying circuit, for generating an amplified input signal according to the input signal, and the amplified input signal comprises a fundamental signal, a first harmonic signal and a second harmonic signal, wherein the first harmonic signal is a second order harmonic of the fundamental signal, and the second harmonic signal is a third order harmonic of the fundamental signal; a harmonic filter, coupled between the voltage input end and the amplifying circuit, for filtering the first harmonic signal and the second harmonic signal; and a signal output end, coupled to the harmonic filter, for outputting an output signal according to the amplified input signal.

Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

A matching network is a matching network of a power amplifier circuit that outputs a signal obtained by a differential amplifier amplifying power of a high-frequency signal. The matching network includes an input-side winding connected between differential outputs of the differential amplifier; an output-side winding that is coupled to the input-side winding via an electromagnetic field and whose one end is connected to a reference potential; a first LC series resonant circuit including a capacitive element and an inductive element connected in series with each other, and being connected in parallel with the input-side winding; and a second LC series resonant circuit including a capacitive element and an inductive element connected in series with each other, and being connected in parallel with the output-side winding.

A frontend module includes a first filter having a passband of a first frequency band, a second filter having a passband of a second frequency band, the second frequency band being higher than the first frequency band, a third filter having a passband of a third frequency band, the third frequency band being higher than the second frequency band, and a sub-filter, connected to the second filter, configured to provide attenuation characteristics for the first frequency band, wherein the second filter comprises a plurality of parallel LC resonance circuits arranged between a ground and different nodes, from among a plurality of nodes between a first terminal and a second terminal, wherein an inductor is connected to a portion of the plurality of parallel LC resonance circuits.

A filter device is mounted on a module substrate and is shielded by a shield member. The filter device has first and second side surfaces opposed to each other. A ground terminal and signal terminals are formed on a bottom surface of the filter device. The shield member includes side wall portions facing the first and second side surfaces. The filter device includes plural LC parallel resonance circuits therein. The inductors of the LC parallel resonance circuits are arranged in parallel with the first side surface and the bottom surface. Each inductor extends upward from its end portion electrically connected to the ground terminal, extends from the first side surface toward the second side surface, and then extends toward the bottom surface. The gap between the first side surface and the corresponding side wall portion is smaller than that between the second side surface and the corresponding side wall portion.

According to various embodiments, an example wireless power transmitter may include a transistor configured to output an amplified signal based on an input signal and a driving voltage, a first capacitor coupled to the transistor in parallel, a first LC resonant circuit coupled to the transistor in parallel and including a first inductor and a second capacitor coupled to the first inductor in series, a third capacitor having a first end coupled to an output terminal of the transistor and the first LC resonant circuit, a feeding coil coupled to a second end of the third capacitor in series, and having at least a part configured to form a second LC resonant circuit with the third capacitor, and a transmission resonator including a transmission coil and a fourth capacitor coupled to the transmission coil in series. At least a part of the transmission coil may be magnetically coupled with the feeding coil, and at least a part of power received from the feeding coil may be output to an outside through the transmission resonator.

A wireless power transmitting device includes: a transistor configured to output a signal corresponding to a set operating frequency, based on an input signal and a driving voltage; a matching circuit connected with the transistor; a transmission coil connected with the matching circuit; an LC resonance circuit connected in parallel between the transistor and the matching circuit and configured to transfer a signal corresponding to at least one harmonic frequency of the operating frequency; and an impedance sensing circuit connected with the LC resonance circuit and configured to sense a load impedance of the wireless power transmitting device based on the signal corresponding to the at least one harmonic frequency transferred through the LC resonance circuit. The matching circuit is configured to provide impedance matching with the sensed load impedance by adjusting an impedance of the matching circuit or an impedance of the transmission coil.

A common line is connected between a common terminal and a common connection node. A first filter has a first pass band. A second filter has a second pass band. At least one of a first condition and a second condition is satisfied. The first condition is that in the first pass band any one of a first impedance of the common line alone viewed from the common terminal (P10) and a second impedance of the first filter viewed from the common connection node includes an inductive property and the other includes a capacitive property. The second condition is that in the second pass band one of the first impedance and a third impedance of the second filter viewed from the common connection node includes an inductive property and the other includes a capacitive property.

A multilayer substrate module includes a first substrate portion including a first substrate portion body including first insulator layers stacked in a vertical direction and a first conductor layer and/or a first interlayer connection conductor provided at the first substrate portion body. A second substrate portion includes a second substrate portion body including second insulator layers stacked in the vertical direction and a second conductor layer and a second interlayer connection conductor provided at the second substrate portion body, and is mounted on an upper surface of the first substrate portion. A mount device is mounted on an upper surface or a lower surface of the second substrate portion. At least a portion of an inductance component is defined by the first conductor layer and the first interlayer connection conductor.