Fabrication of superconducting devices that combine or separate direct currents and microwave signals is provided. A method can comprise forming a direct current circuit that supports a direct current, a microwave circuit that supports a microwave signal, and a common circuit that supports the direct current and the microwave signal. The method can also comprise operatively coupling a first end of the direct current circuit and a first end of the microwave circuit to a first end of the common circuit. The direct current circuit can comprise a bandstop circuit and the microwave circuit can comprise a capacitor. Alternatively, the direct current circuit can comprise a bandstop circuit and the microwave circuit can comprise a bandpass circuit. Alternatively, the microwave circuit can comprise a capacitor and the direct current circuit can comprise one or more quarter-wavelength transmission lines.

Circuitry comprising: a first resonant radio frequency conductive path between a first node and a third node; a second resonant radio frequency conductive path between a second node and the third node; an internode radio frequency conductive path between the first node and the second node; a shunt resonant element coupled to the third node and shared by the first resonant radio frequency conductive path and the second resonant radio frequency conductive path; and a phase shift element for introducing a relative phase shift to the first resonant radio frequency conductive path relative to the second resonant radio frequency conductive path.

An exemplary tunable circuit includes an inductor coupled to a node and a first capacitor coupled to the node. The tunable circuit also includes a variable capacitor coupled to the node, such that a total capacitance of the tunable circuit depends on a fixed capacitance of the first capacitor and a variable capacitance of the variable capacitor. In an example, the inductor and the first capacitor are both included in a passive device and the variable capacitor is in a semiconductor device. The variable capacitor allows the total capacitance to be modified for the purpose of, for example, calibrating the capacitance to account for manufacturing variations, and/or adjusting to a frequency range of operation used by wireless devices in a region of the world. The first capacitor may be a higher quality capacitor providing a larger portion of the total capacitance than the variable capacitor.

An exemplary tunable circuit includes an inductor coupled to a node and a first capacitor coupled to the node. The tunable circuit also includes a variable capacitor coupled to the node, such that a total capacitance of the tunable circuit depends on a fixed capacitance of the first capacitor and a variable capacitance of the variable capacitor. In an example, the inductor and the first capacitor are both included in a passive device and the variable capacitor is in a semiconductor device. The variable capacitor allows the total capacitance to be modified for the purpose of, for example, calibrating the capacitance to account for manufacturing variations, and/or adjusting to a frequency range of operation used by wireless devices in a region of the world. The first capacitor may be a higher quality capacitor providing a larger portion of the total capacitance than the variable capacitor.

A circuit device includes a semiconductor device and an impedance matching network. The impedance matching network includes a superconductor material forming at least one inductor of the circuit device, and the superconductor material exhibits a kinetic inductance per unit square when in a superconducting state. The impedance matching network is configured to transform an impedance of the semiconductor device to match a predetermined second impedance during operation of the circuit device.

An inductive-capacitive filter includes a first insulating-conductive strip wound around a winding axis, where the first insulating-conductive strip includes a first conductive strip joined with a first insulating strip. An inductive-capacitive filter assembly includes a first and a second insulating-conductive strip concentrically wound around a winding axis, the first insulating-conductive strip including a first conductive strip joined with a first insulating strip, and the second insulating-conductive strip including a second conductive strip joined with a second insulating strip.

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

A Wilkinson power combiner (202) is described that includes: at least one input port (210) coupled to at least one output port (212, 214, 216, 218) by at least two power combining stages. A first power combining stage (204) of the at least two power combining stages is configured as a single-stage first frequency pass circuit and a second power combining stage (206) of the at least two stages is configured as a single-stage second frequency pass circuit, and wherein the first frequency is different to the second frequency.

An electrical filter circuit is disclosed. The circuit includes a first input line and a second input line. A first transmission line is coupled electrically in series at a first node with a first output line, and an inductor is coupled electrically in series between the first input line and the first transmission line. The filter also includes a second transmission line having a first impedance coupled to the first node. The second input line is coupled electrically in series at a second node with a second output line. A third transmission line is coupled to the second node, and a capacitor is coupled electrically in series between the second transmission line and the third transmission line. The first output line has a second impedance that is greater than the first impedance.

A band-pass filter includes a first input/output port, a second input/output port, a first high-pass filter, a first low-pass filter, and a first stub resonator. The first stub resonator includes a first distributed constant line. The first low-pass filter is provided between the first input/output port and the first high-pass filter in the circuit configuration. The first distributed constant line has a first end connected to a first path connecting the first input/output port and the first low-pass filter, and a second end closest to a ground in the circuit configuration.