H03H7/17

Thin film surface mount components
09755609 · 2017-09-05 · ·

Surface mount components and related methods involve thin film circuits between first and second insulating substrates. The thin film circuits may include passive components, including resistors, capacitors, inductors, arrays of such components, networks, or filters of multiple passive components. Such thin film circuit(s) can be sandwiched between first and second insulating substrates with internal conductive pads which are exposed to the outside of the surface mount component and electrically connected to external terminations. External terminations may include at least one layer of conductive polymer. Optional shield layers may protect the surface mount components from signal interference. A cover substrate may be formed with a plurality of conductive elements that are designed to generally align with the conductive pads such that conductive element portions are exposed in groups along surfaces of a device.

Filter Arrangement For Filtering Parasitic Induction Currents, And Voltage Converter Comprising A Filter Arrangement

A filter arrangement for filtering parasitic induction currents may include an electrically conductive housing part that at least partly surrounds a cavity, an electric ground connection on the housing part for establishing an electric connection to an electric ground, a busbar in the cavity, and at least one electric filter component electrically connected between the busbar and the housing part and mechanically secured to the housing part and to the busbar. A voltage converter may include at least one such filter arrangement.

System and method for automatic filter tuning

Various methods and devices that involve tuning filters are disclosed. A disclosed method for tuning a filter comprises trimming a center frequency of the filter. The method also comprises trimming an input signal magnitude of the filter. The method also comprises measuring a performance metric of the filter after trimming the center frequency of the filter and the input signal magnitude of the filter. The method also comprises repeating the trimming steps and the measuring step until the filter is tuned for a first physical test condition. A disclosed device that includes a filter also includes first and second trimming circuits that trim the center frequency and input signal magnitude of the filter. A disclosed system includes a motor to transfer a transmitting device from a first physical test condition to a second physical test condition relative to a proximity coupling device with a filter.

Filter device
09691535 · 2017-06-27 · ·

A filter device is electrically connected between a power supply and a power converter including a converter unit for rectifying inputs and an inverter unit for inversely converting outputs of the converter unit. The filter device includes a casing; a filter reactor housed inside the casing, for removing a high-frequency component; and a booster reactor housed inside the casing and disposed below the filter reactor, for boosting a voltage of a current having passed through the filter reactor. The booster reactor includes an iron core, a coil wound around the iron core, and a spacer interposed between inner and outer circumferential portions of the coil to form an air passage for passing air introduced into the casing. The booster reactor is stored in the casing so that the air that has passed through the air passage passes through a periphery of the filter reactor disposed immediately above the booster reactor.

Apparatus and methods for high voltage variable capacitor arrays with body biasing resistors
09673774 · 2017-06-06 · ·

Apparatus and methods for high voltage variable capacitors are provided herein. In certain configurations, an integrated circuit (IC) includes a variable capacitor array and a bias voltage generation circuit that biases the variable capacitor array to control the array's capacitance. The variable capacitor array includes a plurality of variable capacitor cells electrically connected in parallel between a radio frequency (RF) input and an RF output of the IC. Additionally, each of the variable capacitor cells can include a cascade of two or more pairs of anti-series metal oxide semiconductor (MOS) capacitors between the RF input and the RF output. The pairs of anti-series MOS capacitors include a first MOS capacitor and a second MOS capacitor electrically connected in anti-series. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the variable capacitor cells.

RADIO-FREQUENCY (RF) COMPONENT
20170141752 · 2017-05-18 ·

First no-electrode-forming areas where first wiring electrodes such as internal wiring electrodes and external connection terminals are not formed are set to ranges that overlap inductor components in a plan view of at least one of dielectric layers of a first substrate, and second no-electrode-forming areas where second wiring electrodes such as internal wiring electrodes and mounting electrodes are not formed are set to ranges that overlaps the inductor components in a plan view of at least one of dielectric layers of a second substrate. Accordingly, reduction of the inductance of the inductor components, which is caused by the first and second wiring electrodes crossing the magnetic field of the inductor components, can be suppressed. Therefore, the overall component size can be reduced without deteriorating the Q value of the inductor components by configuring an RF component with a stacking structure.

Apparatus and methods for high voltage variable capacitor arrays with drift protection resistors
09634634 · 2017-04-25 · ·

Apparatus and methods for high voltage variable capacitors are provided herein. In certain configurations, an integrated circuit (IC) includes a variable capacitor array and a bias voltage generation circuit that biases the variable capacitor array to control the array's capacitance. The variable capacitor array includes a plurality of variable capacitor cells electrically connected in parallel between a radio frequency (RF) input and an RF output of the IC. Additionally, each of the variable capacitor cells can include a cascade of two or more pairs of anti-series metal oxide semiconductor (MOS) capacitors between the RF input and the RF output. The pairs of anti-series MOS capacitors include a first MOS capacitor and a second MOS capacitor electrically connected in anti-series. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the variable capacitor cells.

Production-process-optimized filter device

A filter device for filtering electrical currents or electromagnetic interference, particularly common-mode interference. The filter device has a soft-magnetic core with a passage, a printed circuit board with a plurality of electronic components, and a holding section. The holding section of the printed circuit board can be put through the core passage wherein the passage is designed such that the holding section and the electronic components arranged on the holding section can be put through the passage.

MULTI-MIXER SYSTEM AND ASSOCIATED RECEIVER AND SIGNAL PROCESSING METHOD
20170019068 · 2017-01-19 ·

A multi-mixer system comprising a plurality of mixers and a filter module is provided. Each of the mixers is selectively enabled to mix an input signal with a corresponding oscillation signal to generate an output signal at an output node; and the filter module provides different frequency responses for the output signals from at least two of the output nodes of the mixers, wherein the at least two of the output nodes of the mixers are connected to different internal nodes of the filter module.

Band-pass filter
12334894 · 2025-06-17 · ·

A band-pass filter includes a first port, a second port, first to third high-pass filters provided between the first port and the second port in this order from a first-port side in a circuit configuration, and a low-pass filter provided between the second high-pass filter and the third high-pass filter in the circuit configuration. Each of the first to third high-pass filters forms an attenuation pole on a low-pass side of the passband. A frequency of the attenuation pole formed by the second high-pass filter is higher than a frequency of the attenuation pole formed by each of the first and third high-pass filters.